Power Module 1200V 75A IGBT Module RoHS MG1275H-XN2MM Features High level of integration F ree wheeling diodes with fast and soft reverse 3 IGBT CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail current Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 180 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 105 A C I DC Collector Current C T =80C 75 A C I Repetitive Peak Collector Current t =1ms 150 A CM p P Power Dissipation Per IGBT 348 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 105 A C I Average Forward Current F(AV) T =80C 75 A C I Repetitive Peak Forward Current t =1ms 150 A FRM p 2 2 I t T =125C, t=10ms, V =0V 1150 A s J R MG1275H-XN2MM 2016 Littelfuse, Inc 1 193 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =3mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =75A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =75A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 10 Gint Q Gate Charge V =600V, I =75A , V =15V 0.7 C ge CE C GE C Input Capacitance 5.3 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.2 nF res T=25C 260 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =75A t Turn - off Delay Time C d(off) T =125C 520 ns J R =4.7 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 6.6 mJ J E Turn - on Energy on T =125C 9.4 mJ J T=25C 6.8 mJ J E Turn - off Energy off T =125C 8.0 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 300 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.36 K/W thJC Diode I =75A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =75A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 300 ns RR I =75A, V =600V F R I Max. Reverse Recovery Current di /dt=-1200A/s 85 A RRM F T =125C E Reverse Recovery Energy J 6.5 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.6 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG1275H-XN2MM 2016 Littelfuse, Inc 2 194 Specifications are subject to change without notice. Revised:10/05/16