X-On Electronics has gained recognition as a prominent supplier of MG1275H-XN2MM IGBT Modules across the USA, India, Europe, Australia, and various other global locations. MG1275H-XN2MM IGBT Modules are a product manufactured by Littelfuse. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

MG1275H-XN2MM Littelfuse

MG1275H-XN2MM electronic component of Littelfuse
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Part No.MG1275H-XN2MM
Manufacturer: Littelfuse
Category: IGBT Modules
Description: Littelfuse IGBT Modules 1200V 75A IGBT
Datasheet: MG1275H-XN2MM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 80
Multiples : 80
80 : USD 157.4543
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 146.2601
5 : USD 144.1267
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Series
Brand
Mounting Style
Maximum Gate Emitter Voltage
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MG1275H-XN2MM from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MG1275H-XN2MM and other electronic components in the IGBT Modules category and beyond.

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Power Module 1200V 75A IGBT Module RoHS MG1275H-XN2MM Features High level of integration F ree wheeling diodes with fast and soft reverse 3 IGBT CHIP(Trench+Field recovery Stop technology) Solderable pins for PCB Low saturation voltage mounting and positive temperature coefficient Temperature sense included Fast switching and short tail current Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 180 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 105 A C I DC Collector Current C T =80C 75 A C I Repetitive Peak Collector Current t =1ms 150 A CM p P Power Dissipation Per IGBT 348 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 105 A C I Average Forward Current F(AV) T =80C 75 A C I Repetitive Peak Forward Current t =1ms 150 A FRM p 2 2 I t T =125C, t=10ms, V =0V 1150 A s J R MG1275H-XN2MM 2016 Littelfuse, Inc 1 193 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =3mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =75A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =75A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 10 Gint Q Gate Charge V =600V, I =75A , V =15V 0.7 C ge CE C GE C Input Capacitance 5.3 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.2 nF res T=25C 260 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =75A t Turn - off Delay Time C d(off) T =125C 520 ns J R =4.7 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 6.6 mJ J E Turn - on Energy on T =125C 9.4 mJ J T=25C 6.8 mJ J E Turn - off Energy off T =125C 8.0 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 300 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.36 K/W thJC Diode I =75A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =75A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 300 ns RR I =75A, V =600V F R I Max. Reverse Recovery Current di /dt=-1200A/s 85 A RRM F T =125C E Reverse Recovery Energy J 6.5 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.6 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG1275H-XN2MM 2016 Littelfuse, Inc 2 194 Specifications are subject to change without notice. Revised:10/05/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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