Power Module 1200V 75A IGBT Module RoHS MG1275W-XN2MM Features High level of integration F ree wheeling diodes with fast and soft reverse 3 IGBT CHIP(Trench+Field recovery Stop technology) Solderable pins f or PCB L ow saturation voltage mounting and positive temperature coefficient T emperature sense included F ast switching and short tail current Applications AC motor control Inverter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 300 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 105 A C I DC Collector Current C T =80C 75 A C I Repetitive Peak Collector Current t =1ms 150 A CM p P Power Dissipation Per IGBT 368 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 105 A C I Average Forward Current F(AV) T =80C 75 A C I Repetitive Peak Forward Current t =1ms 150 A FRM p 2 2 I t T =125C, t=10ms, V =0V 1150 A s J R MG1275W-XN2MM 2014 Littelfuse, Inc 226 1 Specifications are subject to change without notice. Revised:12/04/14Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =3.0mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =75A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =75A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 10 Gint Q Gate Charge V =600V, I =75A , V =15V 0.7 C ge CE C GE C Input Capacitance 5.3 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.2 nF RES T=25C 260 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =75A t Turn - off Delay Time C d(off) T =125C 520 ns J R =4.7 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 6.6 mJ J E Turn - on Energy on T =125C 9.4 mJ J T=25C 6.8 mJ J E Turn - off Energy off T =125C 8.0 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 300 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.34 K/W thJC Diode I =75A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =75A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 300 ns RR I =75A, V =600V F R I Max. Reverse Recovery Current di /dt=2000A/s 85 A RRM F T =125C E Reverse Recovery Energy J 6.5 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.56 K/W thJCD NTC Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit R Resistance T =25C 5 K 25 c B 3375 K 25/50 MG1275W-XN2MM 2014 Littelfuse, Inc 2272 Specifications are subject to change without notice. Revised:12/04/14