MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth: 50 MHz to 70 GHz 0.3 dB Insertion Loss 46 dB Isolation 50 GHz Low Current consumption -5 V for Low Loss State +10 mA for Isolation State Unique AlGaAs Hetero-Junction Anode Technology Silicon Nitride Passivation Polymer Scratch Protection RoHS Compliant* & 260C Reflow Compatible Description Yellow areas indicate bond pads The MA4AGSW1 is an aluminum-gallium-arsenide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using a patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be J2 J1 realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. Applications The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw Ordering Information switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, Part Number Package test equipment and other multi-assembly components. MA4AGSW1 Waffle Pack * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Rev. V6 Electrical Specifications: T = +25C (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. -5 V, 0.05 - 18 GHz 0.2 0.3 Insertion Loss dB -5 V, 18 - 50 GHz 0.3 0.6 10 mA, 0.05 - 18 GHz 20 22 Isolation dB 10 mA, 18 - 50 GHz 40 46 -5 V, 0.05 - 18 GHz 30 Input & Output Return Loss dB -5 V, 18 - 50 GHz 16 Switching Speed 10% -90% RF Voltage, 10 GHz ns 10 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 to achieve 10 ns rise and fall times. Absolute Maximum Ratings T = +25C A Parameter Maximum Rating 2 Incident CW RF Power +23 dBm CW Breakdown Voltage 25 V Bias Current 25 mA Junction Temperature +150C Operating Temperature -55C to +125C Storage Temperature -55C to +150C 2. Maximum combined operating conditions for RF Power, DC bias, and temperature: +23 dBm CW 10 mA (per diode) +85C. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: