MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth: 50 MHz to 70 GHz 0.7 dB Insertion Loss 32 dB Isolation 50 GHz Low Current Consumption: -10mA for low loss state +10mA for Isolation state MACOMs unique AlGaAs hetero-junction anode technology Silicon Nitride Passivation Polymer Scratch Protection RoHS Compliant* and 260C Reflow Compatible Description The MA4AGSW4 is an Aluminum-Gallium-Arsenide, single pole, four throw (SP4T), PIN diode switch. Yellow areas indicate bond pads The switch features enhanced AlGaAs anodes which are formed using MACOMs patented hetero-junction technology. This technology produces a switch with less loss than conventional GaAs processes. As J3 J4 much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride J2 J5 and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. J1 Applications The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch Ordering Information ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use Part Number Package in switching arrays for radar systems, radiometers, test equipment and other multi-assembly MA4AGSW4 Waffle Pack components. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4AGSW4 SP4T AlGaAs PIN Diode Switch Rev. V5 Electrical Specifications: T = +25C, +/-10 mA Bias Current (on wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. 0.05 - 18 GHz 0.7 0.8 Insertion Loss dB 18 - 50 GHz 1.0 1.4 0.05 - 18 GHz 25 41 Isolation dB 18 - 50 GHz 25 32 0.05 - 18 GHz 10 21 Input Return Loss dB 18 - 50 GHz 10 22 0.05 - 18 GHz 10 26 Output Return Loss dB 18 - 50 GHz 10 17 1 Switching Speed 10 GHz ns 20 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 to achieve 20 ns rise and fall times. 2,3 Absolute Maximum Ratings : T = +25C A Parameter Absolute Maximum Breakdown Voltage 25 V Bias Current 25 mA Incident C.W. RF Power +23 dBm C.W. 10 mA, +85C Junction Temperature +175C Operating Temperature -55C to +125C Storage Temperature -55C to +150C Assembly Temperature +300C <10 seconds 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: