MA4AGSW5 SP5T AlGaAs PIN Diode Switch V5 FEATURES Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 1.7dB Insertion Loss at 50 GHZ 35 dB Isolation at 50 GHz Low Current consumption. -10mA for low loss state +10mA for Isolation state MACOMs unique AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polymer Scratch protection RoHS Compliant Yellow areas indicate bond pads DESCRIPTION MACOMs MA4AGSW5 is an Aluminum-Gallium- Arsenide, single pole, five throw (SP5T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOMs hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating Absolute Maximum Ratings T = +25C AMB prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip Parameter Maximum Rating bias circuitry is required. Operating Temperature -55C to +125C Storage Temperature -55C to +150C APPLICATIONS Incident C.W. RF Power +23dBm C.W. The high electron mobility of AlGaAs and the low Breakdown Voltage 25V capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw Bias Current 25mA switch designs where the series capacitance in each off-arm will load the input. AlGaAs PIN diode switches Assembly Temperature +300C < 10 sec are an ideal choice for switching arrays in radar Junction Temperature +175C systems, radiometers, test equipment and other multi- assembly components. Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. 10 mA (per diode) +85C. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4AGSW5 SP5T AlGaAs PIN Diode Switch V5 Electrical Specifications T = 25C, +/-10mA bias current A (On-wafer measurements) FREQUENCY RF PARAMETER MAX UNITS PORT BIAS BAND 0.05 - 18 GHz 1.4 dB J2 to J1 -10 mA J2, +10 mA J3, J4, J5, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J3 to J1 -10 mA J3, +10 mA J2, J4, J5, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB INSERTION LOSS J4 to J1 -10 mA J4, +10 mA J2, J3, J5, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J5 to J1 -10 mA J5, +10 mA J2, J3, J4, J6 18 - 50 GHz 1.9 dB 0.05 - 18 GHz 1.4 dB J6 to J1 -10 mA J6, +10 mA J2, J3, J4, J5 18 - 50 GHz 1.9 dB FREQUENCY BAND MIN UNITS PORT BIAS RF PARAMETER 0.05 - 18 GHz 35.0 dB J2 to J1 -10 mA J6, +10 mA J3, J4, J5, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J3 to J1 -10 mA J6, +10 mA J2, J4, J5, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J4 to J1 -10 mA J6, +10 mA J2, J3, J5, J2 ISOLATION* 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J5 to J1 -10 mA J6, +10 mA J2, J3, J4, J2 18 - 50 GHz 30.0 dB 0.05 - 18 GHz 35.0 dB J6 to J1 -10 mA J2, +10 mA J2, J3, J4, J6 18 - 50 GHz 30.0 dB RF PARAMETER FREQUENCY BAND MIN UNITS PORT BIAS 0.05 - 18 GHz 12.0 dB J2 to J1 -10 mA J2, +10 mA J3, J4, J5, J6 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J3 to J1 -10 mA J3, +10 mA J2, J4, J5, J6 18 - 50 GHz 12.0 dB INPUT/OUTPUT 0.05 - 18 GHz 12.0 dB J4 to J1 -10 mA J4, +10 mA J2, J3, J5, J6 RETURN LOSS 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J5 to J1 -10 mA J5, +10 mA J2, J3, J4, J6 18 - 50 GHz 12.0 dB 0.05 - 18 GHz 12.0 dB J6 to J1 -10 mA J6, +10 mA J2, J3, J4, J5 18 - 50 GHz 12.0 dB *Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction diode port in low loss = 22 dB Typical. Typical Parameter F ( GHz ) RF Ports Test Conditions Units Value Switching Speed* 10.0 J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver 15 nS ( 10-90 % RF Voltage ) *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 ohms to achieve 15 ns rise and fall times. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: