MA4P7455-1225T MACOM

MA4P7455-1225 Quad PIN Diode Attenuator M/A-COM Products Rev. V2 10 - 4000 MHz Features Functional Schematic 4 PIN diodes in a SOT-25 Plastic Package Externally Selectable Bias and RF Matching Network 10 4,000 MHz Useable Frequency Band + 43 dBm IP3 1000 MHz (50 ) 1.0 dB Loss 1000 MHz (50 ) 30 dB Attenuation 1000 MHz (50 ) Lead-Free SOT-25 Package 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 260C Reflow Compatible RoHS* Compliant Version of MA4P274-1225 Description M/A-COMs MA4P7455-1225 is a wideband, lower insertion loss, high IP3, Quad PIN diode attenuator in a low-cost, lead free surface mount SOT-25 package. Four PIN diodes in one package Pin Configuration reduce design parasitics and improve circuit density. Pin No. Function Pin No. Function 1 RF IN 4 Shunt 1 Bias These PIN diode attenuators perform well where RF signal amplitude control is required in 50 2 Series Bias 5 Shunt 2 Bias handset circuits and 75 broadband CATV 3 RF OUT systems. Exceptional insertion loss, attenuation range, and IP3 at <10 mA bias make these devices suitable for better power level control in RF amplifiers. 2,3 Absolute Maximum Ratings Parameter Absolute Maximum 1 Operating Temperature -65 C to +125 C Ordering Information Storage Temperature -65 C to +150 C Model No. Package No Dissipated Power DC Voltage at MA4P7455-1225T Tape and Reel - 100 V Temperature Extremes MADP-007455-001SMB Sample Board DC Current 75 mA 2. Exceeding any one or combination of these limits may cause 1. Reference Application Note M513 for reel size information. permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MA4P7455-1225 Quad PIN Diode Attenuator M/A-COM Products Rev. V2 10 - 4000 MHz 4 Typical 50 Performance 25C using Wideband RF Circuit Design Parameter Test Conditions Units Min. Typ. Max. +3 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias Insertion Loss dB -2.0 1000 MHz +6.5 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias Insertion Loss dB -1.0 1000 MHz +6.5 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias Return Loss dB -10 1000 MHz 0 mA - Series Diode Bias / 0.75 V - Shunt 1 and 2 Bias Attenuation dB -29 1000 MHz 0 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias dBm 43 Input IP3 +6.5 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias dBm 43 F1 = 1000 MHz, F2 = 1100 MHz 0 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias dBm 43 Input IP3 +6.5 mA Series Diode Bias / 0.75 V Shunt 1 and 2 Bias dBm 33 F1 = 100 MHz, F2 = 110 MHz Within 1 dB of Final Attenuation Value Settling Time S 3 1000 MHz RF C.W. Incident 0 - 20 V Series Diode Bias / 0.75 V Shunt 1 and 2 Bias dBm +20 Power 4. Values shown include through loss calibrated out of RF test circuit. 5 Typical 75 Performance +25C using Wideband RF Circuit Design Parameter Test Conditions Units Min. Typ. Max. +2 mA Series Diode Bias / 1.0 V Shunt 1 and 2 Bias dB -1.1 Insertion Loss +4.5 mA Series Diode Bias / 1.0 V Shunt 1 and 2 Bias dB -0.6 1000 MHz 0 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias Attenuation dB -27 1000 MHz +4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias Return Loss dB -10 1000 MHz 5. Values shown include through loss calibrated out of RF test circuit. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.