HMIC SPST Silicon PIN Diode Switch MA4SW110 Rev. V12 Features Functional Diagrams Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss / Higher Isolation Fully Monolithic, Glass Encapsulated Chip Up to 33 dBm CW Power Handling +25C RoHS* Compliant Applications Aerospace & Defense ISM Description J1 J2 The MA4SW110 is a series-shunt, broadband, PIN TM diode switch made with MACOMs HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diode and vias to be embedded into low loss, low dispersion glass. By also incorporating small spacing between circuit elements, the result is an HMIC chip with low insertion loss and high isolation at frequencies up to 26.5 GHz. They are designed for use as moderate power, high performance switches and provide superior performance when compared to similar designs that use discrete components. The top side of the chip is protected by a polymer Ordering Information coating for manual or automatic handling and large gold bond pads help facilitate connection of low Part Number Package inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, MA4SW110 Gel Pack gold/tin solder or conductive silver epoxy. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: HMIC SPST Silicon PIN Diode Switch MA4SW110 Rev. V12 Electrical Specifications: T = +25C, 20 mA A Parameter Test Conditions Units Min. Typ. Max. 6 GHz 0.4 0.7 Insertion Loss 13 GHz dB 0.5 0.9 20 GHz 0.7 1.2 6 GHz 46 55 Isolation 13 GHz dB 39 47 20 GHz 34 42 6 GHz 22 31 Input Return Loss 13 GHz dB 15 33 20 GHz 14 27 1 Switching Speed ns 50 2 Voltage Rating V 50 Signal Compression 500 mW, 1 GHz dB 0.2 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 , C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10 A maximum at -50 volts. 3,4,5 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: RF CW Incident Power 33 dBm +85C Static Sensitivity DC Reverse Voltage 50 V These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged 50 mA +25C Bias Current per Port by static electricity. Proper ESD control techniques 20 mA +85C should be used when handling these Class 0 (HBM) Operating Temperature -65C to +125C and Class C1 (CDM) devices. Storage Temperature -65C to +150C Junction Temperature +175C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Maximum operating conditions for a combination of RF power, DC bias and temperature: 33 dBm CW 15 mA (per diode) +85C. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: