MA4SWx10B-1 Series HMIC Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 1 Features Functional Diagrams Broad Bandwidth Specified 2 - 18 GHz Usable up to 26 GHz MA4SW210B-1 (SP2T) Integrated Bias Network Lower Insertion Loss / Higher Isolation Fully Monolithic, Glass Encapsulated Chip Up to +33 dBm CW Power Handling +25C RoHS* Compliant Description The MA4SW210B-1 (SP2T) and MA4SW310B-1 (SP3T) broadband switches with an integrated bias TM networks utilizing MACOMs HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. MA4SW310B-1 (SP3T) The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20 (gold/tin) solder or conductive silver epoxy. Ordering Information Part Number Package MA4SW210B-1 Gel Pack MA4SW310B-1 Gel Pack 1. Yellow areas indicate ribbon/wire bonding pads *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4SWx10B-1 Series HMIC Silicon PIN Diode Switches with Integrated Bias Network Rev. V6 Electrical Specifications: T = 25C, 20 mA A MA4SW210B-1 (SPDT) Parameter Test Conditions Units Min. Typ. Max. 2 GHz 1.5 1.8 6 GHz 0.7 1.0 Insertion Loss dB 12 GHz 0.9 1.2 18 GHz 1.2 1.8 2 GHz 55 60 6 GHz 47 50 Isolation dB 12 GHz 40 45 18 GHz 36 40 2 GHz 14 6 GHz 15 Input Return Loss dB 12 GHz 15 18 GHz 13 2 Switching Speed ns 50 MA4SW310B-1 (SP3T) Parameter Test Conditions Units Min. Typ. Max. 2 GHz 1.6 2.0 6 GHz 0.8 1.1 Insertion Loss dB 12 GHz 1.0 1.3 18 GHz 1.3 1.9 2 GHz 54 59 6 GHz 47 50 Isolation dB 12 GHz 40 45 18 GHz 36 40 2 GHz 14 6 GHz 15 Input Return Loss dB 12 GHz 16 18 GHz 14 2 Switching Speed ns 50 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 , C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: