MA8334 Series High Power Multi-Throw PIN Diode Switch Modules V5 1 Features Absolute Maximum Ratings SPDT and SP3T Series Diode Designs Low Intermodulation Distortion, 80 dBc Parameter Absolute Maximum High Average Power, 100 W Wide Bandwidth, 10 MHz to 1000 MHz Reverse Voltage Voltage Rating per Diode Low Insertion Loss Forward Current + 250 mA per diode High Isolation RoHS Compliant Operating Temperature -65 C to +125 C Storage Temperature -65 C to +150 C Description and Applications M/A-COM Technology Solutions MA8334 Series Junction Temperature +175 C of multi-throw high power switch modules are 5 W + 25 C . Power Dissipation SPDT and SP3T devices intended for use from derated to 0 W + 125 C . 10 MHz to 1000 MHz. They are designed to func- 1. Operation of this device above any one of these parameters tion with an input power of 100 watts, CW, into a may cause permanent damage. 50 load with a nominal source VSWR of 1.3:1. These switch modules are constructed using ad- vanced hybrid technology and utilize PIN diode chips that have been optimized for low loss and high reliability. These switch modules make use of M/A-COM Techs, high voltage, CERMACHIP PIN diode chip distinguished by its low thermal resistance and low intermodulation distortion. Ap- MA MA 8334 plications for the MA8334 switch modules include 8334 -001 -004 100W incident power T/R antenna and diversity switches. Typical bias conditions for nominal switch operation are +50mA +1V for the low loss condition and -100V 0 mA for isolation. S2 S2 Circuit for Common Cathode Biasing S3 S1 S3 S4 S4 Internal Wiring Diagram Recommended D.C. Bias : Low Loss: +50 mA + 1V, Isolation:-100V 0mA 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA8334 Series High Power Multi-Throw PIN Diode Switch Modules V5 Specifications T =+25C A 3 Model Case Maximum Switch Frequency Minimum Maximum Nominal Diode 1,2 Number Style CW Input Type Range Isolation Insertion Carrier Voltage 1,2 4 Power (MHz) (dB) Loss Lifetime Rating (Watts) (dB) TL (S) (Volts) MA8334-001 844-001 100 SPDT 10-1000 24 0.35 8 900 MA8334-004 844-004 100 SP3T 10-1000 24 0.35 8 900 Performance Notes: Performance Data For the MA8334-001 and the MA8334-004 switches, the small signal insertion loss and isolation measurements are performed at 450 MHz with the ON port forward biased +50mA, +1V and the OFF port reverse biased at 0V, 0mA. For (100W) high signal conditions, the ON port is forward biased +50mA, +1V and the OFF port is re- verse biased at 100V, 0mA. Maximum small signal VSWR for all switches is 1.35:1 with source and load VSWR < 1.05 :1 in 50 system at 450 MHz Nominal thermal resistance for each diode is 20C/W. Bias conditions +10mA/-6mA Note: Specifications subject to change without notification 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: