MAAV-007941 Voltage Variable Absorptive Attenuator Rev. V1 12 dB, DC - 2.0 GHz Features Functional Schematic 12 dB Voltage Variable Attenuation RF2 GND GND GND Low Intermodulation Products Low DC Power Consumption: 50 W 8 7 6 5 Single Voltage Control: 0 to -4 Volts Nanosecond Switching Speed Temperature Range: -40C to +85C Lead-Free SOIC-8 Plastic Package 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 260C Reflow Compatible RoHS* Compliant Version of AT-250 Description M/A-COMs MAAV-007941 is a GaAs MMIC voltage variable absorptive attenuator in a low cost lead-free SOIC 8-lead surface mount plastic package. The 1 2 3 4 MAAV-007941 is ideally suited for use where RF1 GND GND V C attenuation fine tuning, fast switching and very low power consumption are required. Typical applications include radio, cellular, GPS Pin Configuration equipment and other automatic gain/level control circuits. Pin No. Function Pin No. Function 1 RF1 5 Ground The MAAV-007941 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The 2 Ground 6 Ground process features full chip passivation for increased 3 Ground 7 Ground performance and reliability. 4 V 8 RF2 C 1 Ordering Information 2 Absolute Maximum Ratings Part Number Package Parameter Absolute Maximum MAAV-007941-000000 Bulk Packaging Input Power +21 dBm MAAV-007941-TR3000 3000 piece reel Control Voltage +5V, -8.5V 1. Reference Application Note M513 for reel size information. Operating Temperature -40C to +85C Storing Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. * Restrictions on Hazardous Substances, European Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAV-007941 Voltage Variable Absorptive Attenuator Rev. V1 12 dB, DC - 2.0 GHz Electrical Specifications: T = 25C, Z = 50 A 0 3 Parameter Test Conditions Units Min. Typ. Max. DC - 0.1 GHz dB 2.9 3.1 DC - 0.5 GHz dB 3.0 3.2 Insertion Loss DC - 1.0 GHz dB 3.2 3.5 DC - 2.0 GHz dB 3.4 3.8 DC - 0.1 GHz dB + 0.1 + 0.3 Flatness DC - 0.5 GHz dB + 0.2 + 0.4 (Peak to Peak) DC - 1.0 GHz dB + 0.5 + 0.8 DC - 2.0 GHz dB + 1.2 + 1.5 VSWR Ratio 2.1:1 Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 3 50% Control to 90% RF, Ton, Toff nS 5 50% Control to 10% RF Transients In Band mV 10 Linear Operation dBm 13 Power Handling Absolute Maximum Input Power dBm 21 0.05 GHz 0.5 - 2.0 GHz dBm 28 34 IP 2 Measured Relative to Input Power dBm 40 47 (For two-tone Input Power Up to +5 dBm) 0.05 GHz 0.5 - 2.0 GHz dBm 18 31 4 IP 3 Measured Relative to Input Power dBm 18.5 36 (For two-tone Input Power Up to +5 dBm) 3. Control voltage: 0 to -4 volts 20 A typical. 4. Typical readings are for levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply. Lead-Free SOIC-8 Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: