MAAVSS0006 3 Volt Voltage Variable Attenuator V1 25 dB, DC-2.5 GHz 1 Features Functional Schematic Single Voltage Control: 0 to -3 Volts Vc GND 25 dB Attenuation Range at 0.9 GHz Low DC Power Consumption 5 4 Lead-Free SOT-25 Package 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 260C Reflow Compatible RoHS* Compliant Version of AT-255 Description M/A-COMs MAAVSS0006 is a GaAs MMIC voltage variable absorptive attenuator in a lead-free SOT-25 surface mount plastic package. The MAAVSS0005 is ideally suited for use where variable attenuation, 3 1 2 fine tuning, and very low power consumption are required. RF GND RF Typical applications include radio, cellular, GPS 3. V = -3 V to 0 V 25 A maximum. C equipment and automatic gain/level control circuits. The MAAVSS0006 is fabricated using a mature Pin Configuration 1-micron GaAs MESFET process. The process features full chip passivation for increased Pin No. Function Pin No. Function performance and reliability. 1 RF Port 4 Ground 2 Ground 5 V C 3 RF Port Ordering Information 2,3 Absolute Maximum Ratings Part Number Package Parameter Absolute Maximum MAAVSS0006 Bulk Packaging Input Power +21 dBm MAAVSS0006TR-3000 3000 piece reel Control Voltage V C -8 V < Vc < +0.5 V MAAVSS0006SMB Sample Board Operating Temperature -40C to +85C 1. Reference Application Note M513 for reel size information. Storage Temperature -65C to +150C 2. All sample boards include 5 loose parts. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MA-COM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, European Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAVSS0006 3 Volt Voltage Variable Attenuator V1 25 dB, DC-2.5 GHz Electrical Specifications: T = 25C, Z = 50 A 0 Parameter Test Conditions Units Min Typ Max 5 Insertion Loss DC - 2.0 GHz dB 3.6 4.2 Attenuation DC - 1.0 GHz dB 23 25 1.0 - 2.0 GHz dB 18 20 Flatness 0.5 - 1.0 GHz dB + 7 + 10 (Peak-to-Peak) 1.0 - 2.0 GHz dB + 5 + 8 VSWR DC - 2.0 GHz Ratio 3:1 Trise, Tfall 10% to 90% RF, 90% to 10% RF nS 10 Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS 20 Transients In Band mV 10 5. Insertion loss varies 0.003 dB/C. Lead-Free SOT-25 Reference Application Note M538 for lead-free solder reflow recommenda- Meets JEDED moisture Sensitivity Level 1 requirements Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:
