TM HMIC PIN Diode SP2T 20 W Switch for 0.05 - 6.0 GHz High Power Applications MASW-000825 Rev. V6 Features Functional Schematic Exceptional Broadband Performance N/C GND ANT GND Low Loss: T = 0.24 dB 2.025 GHz, 35 mA X 14 T = 0.38 dB 3.500 GHz, 35 mA X High Isolation: N/C N/C 1 R = 31 dB 2.025 GHz, 35 mA X R = 27 dB 3.500 GHz, 35 mA X GND GND High RF CW Input Power: 20 W CW (T Ant Port) X Rx Tx Higher IP3: 3 10 >34 dBm (T Ant Port) X Surface Mount 3 mm 12 Lead PQFN Package GND GND RoHS* Compliant Applications N/C N/C N/C N/C Suitable for High Power TD-SCDMA & WiMax 1 Pin Configuration Description The MASW-000825 is a 0.05 - 6.0 GHz SP2T PIN Pin Function diode switch assembled is a lead-free compact 1, 5 - 8, 12, 16 N/C 3 mm PQFN plastic package. This high peak and average power switch offers extraordinary 2, 4, 9, 11, 13, 15 GND performance with excellent isolation to loss ratio for both the T and R States. This SP2T also provides X X 3 T X outstanding 20 W CW power handling coupled with 10 Rx 64 dBm IIP3 for maximum switch performance. 14 Ant This PIN diode switch is ideally suited for T/R or LNA Protect Switch applications such as WiMax and TD- 1. The exposed pad centered on the package bottom must be SCDMA. connected to RF, DC and thermal ground. This device incorporates a PIN diode die fabricated 2 TM Ordering Information with MACOMs patented Silicon-Glass HMIC process. This chip features two silicon pedestals Part Number Package embedded in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The MASW-000825-12770T 1000 piece reel, 7 inch topside is fully encapsulated with silicon nitride and has an additional polymer passivation layer. These MASW-000825-001SMB Sample Board polymer protective coatings prevent damage and contamination during handling and assembly. 2. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: TM HMIC PIN Diode SP2T 20 W Switch for 0.05 - 6.0 GHz High Power Applications MASW-000825 Rev. V6 3 Electrical Specifications : T = 25C, Z = 50 , Bias = 35 mA / 28 V, P = 0 dBm A 0 INC Parameter Test Conditions Units Min. Typ. Max. 2.0 - 2.7 GHz 0.42 0.55 Insertion Loss, R 3.3 - 3.8 GHz dB 0.56 0.71 X 4.9 - 5.9 GHz 0.95 1.10 2.0 - 2.7 GHz 0.29 0.38 Insertion Loss, T 3.3 - 3.8 GHz dB 0.38 0.48 X 4.9 - 5.9 GHz 0.59 0.71 2.0 - 2.7 GHz 24.5 28.6 Isolation, T to R 3.3 - 3.8 GHz dB 22.0 26.0 X X 4.9 - 5.9 GHz 19.5 22.4 2.0 - 2.7 GHz 21.3 24.2 Isolation, R to T 3.3 - 3.8 GHz dB 19.7 21.6 X X 4.9 - 5.9 GHz 16.5 18.5 2.0 - 2.7 GHz -28 Input Return Loss, T 3.3 - 3.8 GHz dB -28 X 4.9 - 5.9 GHz -25 2.0 - 2.7 GHz -28 Input Return Loss, R 3.3 - 3.8 GHz dB -28 X 4.9 - 5.9 GHz -24 3. See Bias Table 4,5 Electrical Specifications : T = +25C, Characteristic Impedance, Z = 50 A 0 Parameter Conditions Units Min. Typ. Max. T = 5 V 35 mA, R = 28 V 0 mA nd X X T 2 Harmonic dBc -70 X Fo = 2.010 GHz, P = 30 dBm, T to Antenna IN X rd T = 5 V 35 mA, R = 28 V 0 mA X X T 3 Harmonic dBc -86 X Fo = 2.010 GHz, P = 30 dBm, T to Antenna IN X T = 5 V 35 mA, R = 28 V 0 mA X X T Input Third Order X F1 = 2.010 GHz, F2 = 2.020 GHz, dBm 64 Intercept Point P = 20 dBm, T to Antenna IN X T = 5 V 35 mA, R = 28 V 0 mA dBm 43 X X T CW Input Power X F = 2.010, 3.500 GHz, T to Antenna W 20 X T = 5 V 35 mA, R = 28 V 0 mA X X dBm 53 T Peak Input Power F = 2.010 GHz, T to Antenna X X W 200 (5 s RF Pulse Width, 1% Duty 1.10:1 Ant VSWR ) R = 5 V 35 mA, T = 28 V 0 mA dBm 39 X X R CW Input Power X F = 2.010 GHz, Antenna to R W 8 X T = 5 V 35 mA, R = 28 V 0 mA 6 X X T Input P1dB dBm >43 X F = 2.010 GHz, T to Antenna X T = 5 V 35 mA, R = 28 V 0 mA X X F = 2.010 GHz, T to Antenna X T RF Switching Speed ns 200 X (10% - 90% RF Voltage) 1 MHz Rep Rate in Modulating Mode 4. Typical PIN diode forward voltage = 0.9 V 35 mA for insertion loss. 5. Typical PIN diode reverse voltage = 28 V - 1 V = 27 V for isolation. 6. Switch is asymmetrical, 43 dBm RF CW input power applies to T port only. X 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: