TM HMIC PIN Diode SPDT 50 W Switch for 0.05 - 6.0 GHz High Power Applications MASW-000834 Rev. V10 Features Functional Diagram (Top View) Exceptional Broadband Performance N/C N/C T GND Low Loss: X T = 0.33 dB 2010 MHz, 5 V / 20 mA 1616 15 14 13 X T = 0.38 dB 3.5 GHz, 5 V / 20 mA X High Isolation: GND 1 12 N/C 1 R = 44 dB 2010 MHz, 20 mA / 5 V X R = 36 dB 3.5 GHz, 20 mA / 5 V X ANT N/C 2 11 High T RF Input Power: X 50 W CW 2010 MHz High T RF Input Peak Power: X N/C GND 3 10 >1000 W Suitable for Very High Power TD-SCDMA & WiMAX Applications 9 DC2 N/C 4 Surface Mount 4 mm PQFN Package RoHS* Compliant 5 6 8 7 N/C GND R GND X Applications Aerospace & Defense 1 Pin Configuration Wireless Networking & Communication Pin Function Description 1,3,6,8,13,15 GND The MASW-000834 is a SPDT broadband, high linearity, common anode, PIN diode T/R switch, for 2 ANT 0.05 - 6.0 GHz applications, including WiMAX & 2 WiFi. The device is provided in industry standard 4,5,10,11,12,16 N/C 4 mm PQFN plastic packaging. This device incorporates a PIN diode die fabricated with 7 RX TM MACOMs patented silicon-glass HMIC process. 9 DC2 This chip features two silicon pedestals embedded in a low loss, low dispersion glass. The diodes are 14 TX formed on the top of each pedestal. The topside is fully encapsulated with silicon nitride and has an 17 Pad additional polymer passivation layer that prevents 1. The exposed pad centered on the package bottom must be damage and contamination during handling and connected to RF, DC and thermal ground. assembly. 2. MACOM recommends connecting all No Connection (N/C) pins to ground. This compact SPDT switch offers wideband performance with excellent isolation to loss ratio for both T and R states. The PIN diode provides X X 50 W typical CW power handling and 65 dBm IIP3 3 Ordering Information at 2010 MHz for maximum switch performance. This compact SPDT switch offers wideband performance with excellent isolation to loss ratio for MASW-000834-13560T 1000 piece reel both T and R states. The PIN diode provides 45 W X X CW power handling at an 85C baseplate MASW-000834-001SMB Sample Board temperature and 72 dBm IIP3 at 2010 MHz for maximum switch performance. 3. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: TM HMIC PIN Diode SPDT 50 W Switch for 0.05 - 6.0 GHz High Power Applications MASW-000834 Rev. V10 4 Electrical Specifications : T = +25C, 20 mA / 5 V, P = 0 dBm, Z = 50 A INC 0 Parameter Symbol Units Min. Typ. Max. F = 900 MHz R X Insertion Loss, R dB 0.34 0.56 X IL T X Insertion Loss, T dB 0.26 0.445 X IL R X Isolation, ANT To R dB 45.8 52.1 X ISO T X Isolation, ANT To T dB 21.7 27.1 X ISO F = 1800 MHz R X Insertion Loss, R dB 0.40 0.72 X IL Tx Insertion Loss, T dB 0.32 0.49 X IL Rx Isolation, ANT To R dB 43.7 48.9 X ISO T X Isolation, ANT To T dB 18.4 21.4 X ISO F = 2010 MHz R X Insertion Loss, R dB 0.42 0.75 X IL T X Insertion Loss, T dB 0.33 0.5 X IL R X Isolation, ANT To R dB 43.2 44.6 X ISO T X Isolation, ANT To T dB 17.7 19.9 X ISO T X Input Return Loss, T dB 32.1 X RL R X Input Return Loss, R dB 24.2 X RL 4. See Bias Table 1. 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: