MASW-00x100 Series HMIC Silicon PIN Diode Switches Rev. V9 Features Functional Diagrams Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz J1 J2 Lower Insertion Loss / Higher Isolation Fully Monolithic, Glass Encapsulated Chip Up to +33 dBm CW Power Handling +25C RoHS* Compliant Description MASW-001100-1190 (SPST) The MASW-001100-1190 (SPST), MASW-002100- 1191 (SPDT) and MASW-003100-1192 (SP3T) are series-shunt, broadband, PIN diode switches made TM with MACOMs HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low J3 J2 dispersion glass. By also incorporating small spacing between circuit elements, the result is an HMIC chip with low insertion loss and high isolation at frequencies up to 26.5 GHz. J1 They are designed for use as moderate power, high performance switches and provide superior performance when compared to similar designs that use discrete components. MASW-002100-1191 (SPDT) The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. J3 J2 J4 Ordering Information Package Package Part Number xx = 0G xx = 0W J1 MASW-001100-1190(xx) Gel Pack Waffle Pack MASW-002100-1191(xx) Gel Pack Waffle Pack MASW-003100-1192 (SP3T) MASW-003100-1192(xx) Gel Pack Waffle Pack *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW-00x100 Series HMIC Silicon PIN Diode Switches Rev. V9 Electrical Specifications: T = 25C, 20 mA A MASW-001100-1190 (SPST) Parameter Test Conditions Units Min. Typ. Max. 6 GHz 0.4 0.7 Insertion Loss 13 GHz dB 0.5 0.9 20 GHz 0.7 1.2 6 GHz 46 55 Isolation 13 GHz dB 39 47 20 GHz 34 42 6 GHz 22 31 Input Return Loss 13 GHz dB 15 33 20 GHz 14 27 1 Switching Speed ns 50 2 Voltage Rating V 50 Signal Compression 500 mW, 1 GHz dB 0.2 MASW-002100-1191 (SPDT) Parameter Test Conditions Units Min. Typ. Max. 6 GHz 0.4 0.7 Insertion Loss 13 GHz dB 0.5 1.0 20 GHz 0.7 1.2 6 GHz 48 63 Isolation 13 GHz dB 40 50 20 GHz 34 42 6 GHz 20 27 Input Return Loss 13 GHz dB 18 25 20 GHz 15 25 1 Switching Speed ns 50 2 Voltage Rating V 50 Signal Compression 500 mW, 1 GHz dB 0.2 MASW-003100-1192 (SP3T) Parameter Test Conditions Units Min. Typ. Max. 6 GHz 0.5 0.8 Insertion Loss 13 GHz dB 0.7 1.1 20 GHz 0.9 1.5 6 GHz 49 57 Isolation 13 GHz dB 42 48 20 GHz 33 42 6 GHz 20 24 Input Return Loss 13 GHz dB 14 22 20 GHz 11 21 1 Switching Speed ns 50 2 Voltage Rating V 50 Signal Compression 500 mW, 1 GHz dB 0.2 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 , C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 22 2 2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10 A maximum at -50 volts. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: