MASW-005100-1194 HMIC Silicon SP5T PIN Diode Switch Rev. V5 Features Functional Diagrams Broad Bandwidth Specified from 50 MHz to 20.0 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss / Higher Isolation Fully Monolithic, Glass Encapsulated Chip Up to +33 dBm CW Power Handling +25C RoHS* Compliant Description The MASW-005100-1194 is a SP5T, series-shunt, broadband, PIN diode switch made with MACOMs TM patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By incorporating small spacing between circuit elements, the result is an HMIC chip with low insertion loss and high isolation at J4 frequencies up to 26.5 GHz. It is designed to be used as a moderate power, high performance switch and provide superior performance when compared to similar designs that use discrete J3 J5 components. The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. J2 J6 The MASW-005100-1194 is a high performance switch suitable for use in multi-band ECM, radar, and instrumentation control circuits where high J1 isolation to insertion loss ratios are required. With a standard 5 V, TTL controlled, PIN diode driver, 50 ns switching speeds are achievable. Ordering Information Package Package Part Number xx = 0G xx = 0W MASW-005100-1194(xx) Gel Pack Waffle Pack *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW-005100-1194 HMIC Silicon SP5T PIN Diode Switch Rev. V5 Electrical Specifications: T = 25C, 20 mA (On-Wafer Measurements) A Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 20 GHz dB 0.9 1.4 Isolation 20 GHz dB 28 38 Input Return Loss 20 GHz dB 22 Output Return Loss 20 GHz dB 23 1 Switching Speed 10 GHz ns 50 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 , C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 2,3,4 Absolute Maximum Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid RF CW Incident Power +33 dBm damage: Reverse Voltage -25 V Static Sensitivity Bias Current per Port 50 mA +25C These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Operating Temperature -65C to +125C by static electricity. Proper ESD control techniques should be used when handling these Class 0 Storage Temperature -65C to +150C (HBM) and Class C1 (CDM).devices. 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Maximum operating conditions for a combination of RF power, DC bias and temperature: +33 dBm CW 15 mA (per diode) +85C. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: