TM SURMOUNT Silicon PIN Diode SPDT Switch 6 - 14 GHz MASW-011021 Rev. V6 Features Specified from 8 - 12 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance Surface Mountable, Fully Monolithic Die Glass Encapsulated Construction 4 20 W Pulsed Power Handling Silicon Nitride Passivation Polymer Scratch Protection RoHS* Compliant Applications Aerospace & Defense Functional Schematic Description J1 This device is a SURMOUNT X-Band monolithic SPDT switch designed for high power, high J3 J2 performance applications. This surface mount B2 B1 chip-scale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using MACOMs patented HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. 2 Pin Configuration Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent J1 RF C damage to the junction and the anode airbridge during handling and assembly. J2 RF 1 1 Ordering Information J3 RF 2 Part Number Package B1 Bias 1 MASW-011021-14010G 25 piece gel pack B2 Bias 2 MASW-011021-001SMB Sample Test Board 2. The exposed pad centered on the chip bottom must be connected to RF and DC ground. 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: TM SURMOUNT Silicon PIN Diode SPDT Switch 6 - 14 GHz MASW-011021 Rev. V6 Electrical Specifications: Bias: -5 V, +30 mA, T = 25C, P = 0 dBm, Z = 50 A IN 0 Parameter Units Min. Typ. Max. 8 GHz 0.70 Insertion Loss 10 GHz dB 0.70 0.85 12 GHz 0.65 8 GHz 34 Input to Output Isolation 10 GHz dB 30 36 12 GHz 34 Return Loss dB 15 IIP3 dBm 60 3 Voltage Rating V 80 10% to 90 % of detected RF signal Switching Speed ns 130 driven by TTL compatible drivers 4 CW Power Handling -30 V, +30 mA W 10 3. Maximum reverse leakage current in the shunt PIN diodes shall be 0.1 A maximum. 4. 20 W up to 300 s 40% Duty Cycle 5,6 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Bias Current +25C 100 mA Static Sensitivity These electronic devices are sensitive to DC Reverse Voltage 80 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Junction Temperature +175C should be used when handling these Class 1A HBM devices. Operating Temperature -65C to +125C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: