MASW-011030 Switch, SP3T 100 Watt Reflective Rev. V1 0.03 - 3.0 GHz Features Functional Schematic Suitable for High Power Military and Civilian Radio Applications N/C N/C RFC N/C Power Handling: 100 W 85C 16 Insertion Loss: 0.35 dB 2 GHz Isolation: 40 dB 2 GHz 1 N/C N/C Surface Mount 7 mm 16-lead HQFN Package RoHS* Compliant N/C N/C Class 1B HBM ESD Rating RF1 RF3 Description The MASW-011030 is a high power PIN diode SP3T B1 B3 switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity with low DC consumption. N/C B2 RF2 N/C This device is capable of handling 100 Watts CW incident power at a base plate temperature of 85C. This high power switch is ideal for use on land Pin Configuration mobile radio and MIL-COM applications that require Pin Function Pin Function higher CW and pulsed power operation. 1 No Connection 9 B3 Bias The MASW-011030 is manufactured using MACOMs hybrid manufacturing process featuring 2 No Connection 10 RF3 / V3 Bias high voltage PIN diodes and passive devices 3 RF1 / V1 Bias 11 No Connection integrated in a 7 mm HQFN 16-lead plastic package. 4 B1 Bias 12 No Connection 5 No Connection 13 No Connection 6 B2 Bias 14 RFC / V4 Bias 1 Ordering Information 7 RF2 / V2 Bias 15 No Connection 8 No Connection 16 No Connection Part Number Package 2 Paddle Ground MASW-011030-14040T 500 piece reel 2. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. MASW-011030-001SMB Sample Board 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: MASW-011030 Switch, SP3T 100 Watt Reflective Rev. V1 0.03 - 3.0 GHz 3 Electrical Specifications: T = 25C, Bias = +5 / -5 V, 50 mA / 100 mA A Parameter Test Conditions Units Min. Typ. Max. 0.5 GHz 0.15 Insertion Loss 1.0 GHz dB 0.20 0.35 P = 0 dBm IN 2.0 GHz 0.35 0.50 0.5 GHz 50 Isolation 1.0 GHz dB 45 50 P = 0 dBm IN 2.0 GHz 40 Input Return Loss P = 0 dBm dB >15 IN dBm 52 CW Input Power 25C base plate, 2.0 GHz W 158 dBm 50 CW Input Power 85C base plate, 2.0 GHz W 100 P0.1dB 25C base plate, 2.0 GHz dBm >52 F1 = 2.00 GHz, F2 = 2.01 GHz Input IP3 dBm 62 P = 40 dBm/Tone, 28 V IN (10-90% RF Voltage) RF Switching Speed ns 800 1 MHz Rep Rate in Modulating Mode 3. See Bias table. 4 Bias (+5 V / -5 V) V1 Bias V2 Bias V3 Bias B1 Bias B2 Bias B3 Bias V4 Bias RF State (V) (V) (V) (V) (V) (V) (V) RFC RF1 Low Loss -5 V +5 V +5 V RFC RF2 Isolation 0 V 0 V 0 V 0 V 100 mA 50 mA 50 mA RFC RF3 Isolation RFC RF2 Low Loss +5 V -5 V +5 V RFC RF1 Isolation 0 V 0 V 0 V 0 V 50 mA 100 mA 50 mA RFC RF3 Isolation RFC RF3 Low Loss +5 V +5 V -5 V RFC RF1 Isolation 0 V 0 V 0 V 0 V 50 mA 50 mA 100 mA RFC RF2 Isolation 4. DC reverse bias of a PIN Diode operating at a high power is dependent on RF frequency, incident power, and VSWR. See Minimum Reverse DC Voltage table for high power operation. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: