Switch, SP2T 100 W Reflective 0.03 - 3.0 GHz MASW-011055 Rev. V3 Features Functional Schematic Suitable for High Power Military and Civilian Radio Applications N/C RFC N/C Power Handling: 100 W 85C 12 11 10 Insertion Loss: 0.35 dB 2 GHz Isolation: 51 dB 2 GHz Lead-Free 5 mm HQFN-12LD Package N/C 1 9 N/C RoHS* Compliant Applications N/C N/C 2 8 ISM / MM Description The MASW-011055 is a high power PIN diode SP2T RF1 3 7 RF2 switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity. This device is capable of 4 5 6 handling 100 Watts CW incident power at a base B1 N/C B2 plate temperature of 85C. This high power switch is ideal for use on land mobile radio and MIL-COM applications that require Pin Configuration higher CW and pulsed power operation. Pin Function The MASW-011055 is manufactured using MACOMs hybrid manufacturing process featuring 1, 2, 5, 8, 9, 10, 12 No Connection high voltage PIN diodes and passive devices integrated in a 5 mm HQFN 12-lead plastic package. 3 RF1 / V1 Bias 4 B1 Bias 1 Ordering Information 6 B2 Bias 7 RF2 / V2 Bias MASW-011055-TR0500 500 piece reel 11 RFC / V3 Bias Sample Board 2 MASW-011055-SMB Paddle Ground 0.5 - 3 GHz 1. Reference Application Note M513 for reel size information. 2. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Switch, SP2T 100 W Reflective 0.03 - 3.0 GHz MASW-011055 Rev. V3 3 Electrical Specifications: T = 25C, Bias = +5 / 0 V, 50 mA / 100 mA A Parameter Test Conditions Units Min. Typ. Max. 0.5 GHz 0.10 Insertion Loss 1 GHz dB 0.20 0.50 P = 0 dBm IN 2 GHz 0.35 0.5 GHz 52 Isolation 1 GHz dB 48 54 P = 0 dBm IN 2 GHz 51 Input Return Loss P = 0 dBm dB >15 IN dBm 52 CW Input Power 25C base plate, 2 GHz W 158 dBm 50 CW Input Power 85C base plate, 2 GHz W 100 P0.1dB 25C base plate, 2 GHz dBm >52 F1 = 2000 MHz, F2 = 2010 MHz Input IP3 dBm 66 P = 40 dBm/Tone, 28 V IN (10-90% RF Voltage) RF Switching Speed ns 500 1 MHz Rep Rate in Modulating Mode 3. See Bias table. 4 Bias (+5 V / 0 V for Small Signal Testing) V1 Bias V2 Bias V3 Bias B1 Bias B2 Bias RF State (V) (V) (V) (V) (V) RFC RF1 Low Loss 0 V -100 mA +5 V 50 mA +5 V 100 mA +5 V 0 mA 0 V -50 mA RFC RF2 Isolation RFC RF2 Low Loss +5 V 50 mA 0 V -100 mA +5 V 100 mA 0 V -50 mA +5 V 0 mA RFC RF1 Isolation 4. DC reverse bias of a PIN Diode operating at a high power is dependent on RF frequency, incident power, and VSWR. See Minimum Reverse DC Voltage table for high power operation. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: