Switch, SP2T 100 W Reflective 0.5 - 6.0 GHz MASW-011060 Rev. V2 Features Functional Schematic Suitable for Large Signal Broadband Applications N/C N/C RFC N/C N/C Power Handling: 100 W 85C Insertion Loss: 0.5 dB 4 GHz 20 19 18 17 16 Isolation: 35 dB 4 GHz Lead-Free 4 mm HQFN-20LD Package N/C RoHS* Compliant 1 N/C 15 N/C 2 14 N/C Applications ISM / MM N/C 3 13 N/C Description 4 N/C 12 N/C The MASW-011060 is a high power PIN diode SP2T RF1 5 switch in a common anode configuration, operating 11 RF2 from 0.5 to 6.0 GHz. It features low insertion loss and excellent linearity. This device is capable of 6 7 8 9 10 handling 100 Watts CW of incident power at a base plate temperature of 85C. N/C B1 N/C B2 N/C This high power switch is ideal for use on broadband, MIL-COM, IED, and cellular applications that require higher CW and pulsed power operation. 3 Pin Configuration The MASW-011060 is manufactured using MACOMs hybrid manufacturing process featuring Pin Function high voltage PIN diodes and passive devices 1 - 4, 6, 8, 10, integrated in a 4 mm HQFN 20-lead plastic package. No Connection 12 - 17, 19, 20 5 RF1 / V1 Bias 7 B1 Bias 1,2 Ordering Information 9 B2 Bias 11 RF2 / V2 Bias MASW-011060-TR0500 500 piece reel 18 RFC / V3 Bias 4 MASW-011060-SMB Sample Board Paddle Ground 3. MACOM recommends connecting unused package pins to 1. Reference Application Note M513 for reel size information. ground. 2. All sample boards include 5 loose parts. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Switch, SP2T 100 W Reflective 0.5 - 6.0 GHz MASW-011060 Rev. V2 5 Electrical Specifications: T = 25C, Bias = 0 / +5 V , 50 mA / 100 mA A Parameter Test Conditions Units Min. Typ. Max. 0.5 GHz 0.15 1.0 GHz 0.25 2.0 GHz 0.30 0.45 Insertion Loss 3.0 GHz dB 0.35 P = 0 dBm IN 4.0 GHz 0.50 5.0 GHz 0.75 6.0 GHz 0.80 0.5 GHz 47 1.0 GHz 47 2.0 GHz 40 44 Isolation 3.0 GHz dB 40 P = 0 dBm IN 4.0 GHz 35 5.0 GHz 32 6.0 GHz 28 Input Return Loss P = 0 dBm dB >15 IN 25C Base plate, 2 GHz dBm 52 6 CW Input Power VDC = 0 V / 28 V W 158 6 85C Base plate, 2 GHz dBm 50 CW Input Power VDC = 0 V / 28 V W 100 6 25C Base plate, 2 GHz P0.1dB dBm 52 VDC = 0 V / 28 V F1 = 3000 MHz, F2 = 3010 MHz Input IP3 dBm 75 P = 40 dBm/Tone, VDC = 0 V / 28 V IN 50% control to 90% RF, T , T s 1.5 ON OFF 50% control to 10% RF 10% to 90% RF, T , T s 1.1 RISE FALL 90% to 10% RF 5. See Bias table and Application Schematic. 6. DC reverse bias of a PIN Diode operating at a high power is dependent on RF Frequency, Incident Power, and VSWR. See Minimum Reverse DC Voltage table for high power operation. 7,8 9 Absolute Maximum Ratings Minimum Reverse DC Voltage Minimum Reverse Parameter Absolute Maximum Frequency (MHz) DC Voltage Forward Current 150 mA 500 41 V Reverse DC Voltage 150 V 1000 22 V Operating Temperature -40C to +85C 2000 11 V 3000 8 V Storage Temperature -55C to +150C 4000 6 V Junction Temperature +175C 7. Exceeding any one or combination of these limits may cause 9. Required to maintain low loss under 100 W of incident power with 1.5:1 VSWR. permanent damage to this device. 8. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: