MASW-011120 PIN Diode SPDT 200 W Switch for High Power Applications Rev. V1 0.03 - 6.0 GHz Features Functional Schematic Broadband Performance Low Loss 2.7 GHz: TX = 0.25 dB RX = 0.35 dB High Isolation 2.7 GHz: RX = 44 dB Power Handling 2.7 GHz: 200 W CW +85C 122 W CW +120C Lead-Free 5 mm 20-Lead HQFN Package RoHS* Compliant Designed for High Power TDD-LTE Applications Description The MASW-011120 is a SPDT high power, broadband, high linearity, PIN diode T/R switch for 0.03 - 6.0 GHz high power applications. The device is provided in an industry standard lead free 5 mm HQFN plastic package. 3 Pin Configuration This device incorporates PIN diode die fabricated Pin Pin Name Function with a low loss, high isolation switching diode process. 1,4,5,7,11,19 GND Ground MASW-011120 can be used in any application 2,6,8,10,13,14, N/C No Connection requiring a low-loss, high-isolation, and high-power- 15,16,18,20 handing SPDT. 3 ANT RF Port 9 RX RF Port 12 RX BIAS RX Bias Input 1,2 Ordering Information 17 TX RF Port Part Number Package 4 21 Paddle Ground MASW-011120-TR1000 1000 Piece Tape and Reel 3. MACOM recommends connecting all No Connection (N/C) MASW-011120-TR3000 3000 Piece Tape and Reel pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. MASW-011120-SMB Sample Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 3 loose parts. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW-011120 PIN Diode SPDT 200 W Switch for High Power Applications Rev. V1 0.03 - 6.0 GHz Electrical Specifications: Freq. = 2.7 GHz, 3.5 GHz, T = +25C, Z = 50 , Bias = 60 V / 0 V. See Bias Table. A 0 Parameter Test Conditions Units Min. Typ. Max. ANT to TX ON 2.7 GHz 0.25 0.45 ANT to TX ON 3.5 GHz 0.30 0.50 Insertion Loss dB ANT to RX ON 2.7 GHz 0.35 0.60 ANT to RX ON 3.5 GHz 0.50 0.70 ANT to RX (TX ON) 2.7 GHz 35 44 ANT to RX (TX ON) 3.5 GHz 35 44 Isolation dB ANT to TX (RX ON) 2.7 GHz 12 15 ANT to TX (RX ON) 3.5 GHz 10 13 ANT to RX ON 23 ANT Return Loss dB ANT to TX ON 25 TX Return Loss ANT to TX ON dB 22 RX Return Loss ANT to RX ON dB 26 5 Input P0.1 dB ANT to TX ON dBm 51 IIP3 TX ANT to TX, P = 30 dBm dBm 68 IN IIP3 RX ANT to RX, P = 30 dBm dBm 68.5 IN 85C 2.7 GHz 100 mA 145 5 RF Input Power CW 85C 2.7 GHz 200 mA 200 W ANT to TX ON 120C 2.7 GHz 100 mA 97 120C 2.7 GHz 200 mA 122 Switching Speed 0.5 TX T ON T - 50% control to 90% RF 1.6 ON TX T s OFF T - 50% control to 10% RF 0.3 OFF RX T ON 0.3 RX T OFF Group Delay ns 50 20 MHz 0.05 In-band Ripple dB 200 MHz 0.1 5. Maximum source and load VSWR < 1.2:1. Bias Table Bias Table TX RX RX BIAS ANT Pin 17 9 12 3 6 6 6 6 ANT to TX ON (Insertion Loss) (GND), -100 mA (+60 V), 10 mA (GND), -10 mA +5 V, 100 mA 6 6 6 6 ANT to RX (Isolation) (GND), -100 mA (+60 V), 10 mA (GND), -10 mA +5 V, 100 mA 6 6 ANT to RX ON (Insertion Loss) (+60 V), 0 mA (GND), -100 mA (+60 V), 0 mA +5 V, 100 mA 6 6 ANT to TX (Isolation) (+60 V), 0 mA (GND), -100 mA (+60 V), 0 mA +5 V, 100 mA 6. Currents level comply with the schematic on page 8. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: