GaAs SPDT Switch DC - 3 GHz M A S W 2 0 0 0 V 2.00 F e a t u r e s l Low Insertion Loss, 0.5 dB Typical 2 GHz l Fast Switching Speed, 22 ns Typical l Reflective/Absorptive Configuration Ultra Low DC Power Consumption l Guaranteed Specifications** (-55C to +85C) Frequency Range DC - 3.0 GHz Typical Pe r formance +25C*** Insertion Loss DC0.5 GHz 0.5 dB Max DC1.0 GHz 0.6 dB Max DC2.0 GHz 0.8 dB Max DC3.0 GHz 1.0 dB Max VSWR Relective DC0.5 GHz 1.20:1 Max DC1.0 GHz 1.20:1 Max DC2.0 GHz 1.20:1 Max DC3.0 GHz 1.40:1 Max Absorptive DC2.0 GHz 1.20:1 Max DC3.0 GHz 1.40:1 Max Isolation DC0.5 GHz 43 dB Min DC1.0 GHz 35 dB Min DC2.0 GHz 27 dB Min DC3.0 GHz 24 dB Min Operating Characteristics Impedance 50 Nominal Switching Characteristics t t RISE, FALL (10/90% or 90/10% RF) 22 ns Typ t t ON, OFF (50% CTL to 90/10% RF) 27 ns Typ Transients (In-Band) 25 mV Typ Input Power for 1dB Compression Control Voltages (Vdc) 0/-5 0/-8 0.05 GHz +24 dBm +26 dBm Typ 0.53.0 GHz +26 dBm +32 dBm Typ Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP IP 2 3 0.05 GHz +63 +43 dBm Typ 0.53.0 GHz +80 +53 dBm Typ Control Voltage (Complementary Logic) V Low 0 to -0.2 V 5 uA Max IN S ch e m a t i c V Hi IN -5 V 60 uA Typ to -8 V 500 uA Max Die Size 0.056 x 0.056 x 0.010 1.40mm x 1.40mm x 0.25mm) ** All specifications apply with 50 impedance connected to all RF ports, 0 and 0 and -5 Vdc control voltages. *** Loss changes 0.0025 dB/C (From -55C to +85C) For relective operation RL1/RL2 are unconnected. For absorptive operation RL1 connects to RF1 and RL2 connects to RF2.Handling, Mounting, Bonding Procedure MASW2000 V 2.00 Truth Ta bl e * * * Handling Precautions Permanent damage to the MASW2000 may occur if the following Control Inputs Condition Of Switch precautions are not adhered to: A1/B2 A2/B1 RF1 RF2 A. Cleanliness The MASW2000 should be handled in a clean environment. DO NOT attempt to clean unit after the VINHi VINLow On Off MASW2000 is installed. VINLow VINHi Off On B. Static Sensitivity All chip handling equipment and personnel *** For normal SPDT operation A1 is connected to B2 and A2 is connected to B1. should be DC grounded. C. Transient Avoid instrument and power supply transients while bias is applied to the MASW2000. Use shielded signal and bias cables to minimize inductive pick-up. Maximum Ratings D. Bias Apply voltage to either control port A1/B2 or A2/B1 A.Control Voltage (A1/B2 or A2/B1):-8.5 Vdc only when the other is grounded. Neither port should be allowed to float. B. Max Input RF Power: +34 dBm C. Storage Temperature:-65C to +175C E. General Handling It is recommended that the MASW2000 chip be handled along the long side of the die with a sharp D. Maximum Operating Temperature:+175C pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. Mounting BondPad Dimensions Inches (mm) The MASW2000 is back-metallized with Pd/Ni/Au (100/1,000/ 10,000) metallization. It can be die-mounted with AuSn eutectic RF:0.004 x 0.004 preforms or with thermally conductive epoxy. The package sur- (0.100 x 0.100) face should be clean and flat before attachment. RF1, RF2:0.009 x 0.009 (0.225 x 0.225) Eutectic Die Attach: A1, A2, B1, B2:0.004 x 0.004 A. A 80/20 gold/tin preform is recommended with a work surface (0.100 x 0.100) temperature of approximately 255C and a tool temperature of 265C. When hot 90/10 nitrogen/hydrogen gas is applied, tool GND1, GND2:0.009 x 0.004 (0.225 x 0.105) tip temperature should be approximately 290C. RL1, RL2:0.004 x 0.005 B. DO NOT expose the MASW2000 to a temperature greater (0.100 x 0.125) than 320C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW2000 Die Size Inches (mm) into position. A thin epoxy fillet should be visible around the perimeter of the chip. 0.056 x 0.056 x 0.010 (1.40 x 1.40 x 0.25) B. Cure epoxy per manufacturers recommended schedule. C. Electrically conductive epoxy may be used but is not required. Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. GND bonds should be as short as possible at least three and no more than four bond wires from ground pads to package are recommended.