MASW20000 GaAs SPDT Switch Rev. V5 DC - 20 GHz Features Pad Layout Very Broadband Performance Low Insertion Loss: 1.75 dB Typical 18 GHz GND RF GND High Isolation: 50 dB Typical 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration GND GND Ultra Low DC Power Consumption Via Hole Grounding RF1 RF2 Description M/A-COMs MASW20000 is a versatile, high GND GND isolation SPDT switch. Designed on M/A-COMs mature 1-micron MESFET process, this parts is ideal for modules or other packaging for use in the A1 B2 B1 A2 Cellular, GPS, LAN and infrastructure markets. Demonstrating performance up to 20 GHz, the MASW20000 will perform well in many types of applications within that range. Bond Pad Dimensions Bond Pad Dimension Inches (mm) RF, RF1, RF2 0.004 x 0.004 (0.100 x 0.100) 1 Ordering Information A1, A2, B1, B2 0.004 x 0.004 (0.100 x 0.100) Part Number Package 0.083 x 0.035 x 0.004 DIE Size (2.10 x 0.89 x 0.10) MASW20000 Die 1. Die quantity varies. Schematic 2 Absolute Maximum Ratings Parameter Absolute Maximum Control Voltage (A1/B2 or A2/B1) -8.5 VDC Input RF Power +34 dBm Operating Temperature +175C Storage Temperature -65C to +175C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW20000 GaAs SPDT Switch Rev. V5 DC - 20 GHz 3 4 Electrical Specifications : T = 25C, Z = 50, +25C A 0 Parameter Test Conditions Units Min. Typ. Max. 10 GHz dB 1.4 1.7 Insertion Loss 18 GHz dB 1.75 2.1 20 GHz dB 2.0 2.5 10 GHz dB 50 59 Isolation 18 GHz dB 42 49 20 GHz dB 40 47 10 GHz Ratio 1.6:1 VSWR 18 GHz Ratio 1.8:1 20 GHz Ratio 2.0:1 Trise, Tfall 10% to 90% RF and 90% to 10% RF ns 2 Ton, Toff 50% control to 90% RF, and 50% control to 10% RF ns 3 Transients In-Band mV 20 0.5 - 20 GHz, 0 to -5 V dBm 25 Input P1dB 0.05 GHz, 0 to -5 V dBm 18 Two Tone, +5 dBm/Tone, 5 MHz Spacing, >50 MHz IP2 0.5 - 20 GHz dBm +59 Two Tone, +5 dBm/Tone, 5 MHz Spacing, >50 MHz IIP3 0.5 - 20 GHz dBm +43 0.05 GHz dBm +27 Control Voltage V Low, 0 to -0.2 V A 5 IN (Complementary Logic) V High, -5 V A 50 IN 3. All specifications apply with 50 impedance connected to all RF ports, 0 and 5 VDC control voltages. 4. Loss changes 0.0025 dB/C (From 55C to +85C). 5,6 Handling Procedures Truth Table Please observe the following precautions to avoid Control Inputs Condition of Switch damage: A1/B2 A2/B1 RF1 RF2 Static Sensitivity V Hi V Low On Off IN IN Gallium Arsenide Integrated Circuits are sensitive V Low V Hi Off On IN IN to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control 5. V Low = 0 to 0.2 V, V Hi = -5V IN IN 6. For normal SPDT operation A1 is connected to B2 and A2 is techniques should be used when handling these connected to B1. devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: