MASW6010G GaAs SPDT Switch Rev. V6 DC - 6.0 GHz Features Pad Layout Low Insertion Loss: 0.5 dB Typical 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption RFC GND GND Description M/A-COM Technologys MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and RF1 RF2 module use. It will function well for designs below 6 GHz. A B This die includes full passivation for performance and reliability. Bond Pad Dimensions 1 Bond Pad Dimension Inches (mm) Ordering Information RFC 0.004 x 0.004 (0.100 x 0.100) Part Number Package RF2, RF3 0.004 x 0.004 (0.100 x 0.100) MASW6010G Die A, B 0.004 x 0.004 (0.100 x 0.100) 1. Die quantity varies. GND1, GND2 0.012 x 0.004 (0.300 x 0.100) DIE Size 0.031 x 0.031 x 0.010 (0.80 x 0.80 x 0.25) 2 Absolute Maximum Ratings Schematic Parameter Absolute Maximum Control Voltage (A/B) -8.5 VDC Input RF Power +34 dBm (500 MHz - 6 GHz) Operating Temperature +175C Storage Temperature -65C to +175C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASW6010G GaAs SPDT Switch Rev. V6 DC - 6.0 GHz 3,4 Electrical Specifications : T = 25C, Z = 50 A 0 Parameter Test Conditions Units Min. Typ. Max. DC - 1.0 GHz 0.6 Insertion Loss DC - 2.0 GHz dB 0.8 DC - 6.0 GHz 1.4 DC - 1.0 GHz 45 Isolation DC - 2.0 GHz dB 38 DC - 6.0 GHz 22 DC - 1.0 GHz 1.1:1 VSWR DC - 2.0 GHz Ratio 1.2:1 DC - 6.0 GHz 1.9:1 Trise, Tfall 10% to 90% RF and 90% to 10% RF ns 2 50% control to 90% RF, and 50% control to Ton, Toff ns 4 10% RF Transients In-Band mV 10 Above 500 MHz, 0 to -5 V +27 100 MHz, 0 to -5 V +21 Input P1dB dBm Above 500 MHz, 0 to -8 V +33 100 MHz, 0 to -8 V +26 Two Tone, +5 dBm/Tone, 5 MHz Spacing IP2 Above 500 MHz +68 dBm 100 MHz +62 Two Tone, +5 dBm/Tone, 5 MHz Spacing IIP3 Above 500 MHz +46 dBm 100 MHz +40 V Low, 0 to -0.2 V 20 IN Control Voltage V High, -5 V A 50 IN (Complementary Logic) V High, -8 V 300 IN 3. All specifications apply with 50-ohm impedance connected to all RF ports, 0 and 8 VDC control voltages. 4. Loss changes 0.0025 dB/C (From 55C to +85C). 5 Handling Procedures Truth Table Please observe the following precautions to avoid Condition of Switch Control Inputs damage: RF Common to each RF Port A B RF1 RF2 Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive V Hi V Low On Off IN IN to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control V Low V Hi Off On IN IN techniques should be used when handling these 5. V Low = 0 to -0.2 V, V High = -5 to -8 V. IN IN devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: