MASWCC0009 GaAs SP4T Switch, Absorptive Rev. V7 DC - 3.0 GHz Features Functional Schematic Typical Isolation: 35 dB (2.0 GHz) Typical Insertion Loss: 1.2 dB (2.0 GHz) Integral ASIC/CMOS Driver 50 Ohm Nominal Impedance PIN 13 C2 PIN C4 12 Low DC Power Consumption C3 C1 Test Boards Available GND Vcc Lead-Free QSOP-24 Package 100% Matte Tin Plating over Copper GND Vee Halogen-Free Green Mold Compound GND N/C 260C Reflow Compatible N/C N/C RoHS* Compliant Version of SW65-0440 N/C N/C RF2 RF3 Description GND GND M/A-COM s MASWCC0009 is a GaAs MMIC RF4 RF1 absorptive SP4T switch with an integral silicon ASIC GND GND driver. This device is in a 24-lead plastic package. PIN 24 RFC PIN This switch offers excellent broadband performance GND 1 and repeatability from DC to 3 GHz, while maintaining low DC power dissipation. The MASWCC0009 is ideally suited for wireless infrastructure applications. Pin Configuration Pin No. Function Pin No. Function Ordering Information 1 RFC 13 C4 2 GND 14 C3 Part Number Package 3 RF1 15 GND MASWCC0009 Bulk Packaging 4 GND 16 GND MASWCC0009TR 1000 piece reel 5 RF2 17 GND 6 NC 18 NC MASWCC0009-TB Sample Test Board 7 NC 19 NC Note: Reference Application Note M513 for reel size 8 NC 20 RF3 information. 9 V 21 GND EE 10 V 22 RF4 CC 11 C1 23 GND 12 C2 24 GND NC = No Connection * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWCC0009 GaAs SP4T Switch, Absorptive Rev. V7 DC - 3.0 GHz Electrical Specifications: T = 25C A Parameter Test Conditions Units Min Typ Max Insertion Loss DC - 2.0 GHz dB 1.2 1.8 DC - 3.0 GHz dB 1.3 2.5 Isolation DC - 2.0 GHz dB 32 35 DC - 3.0 GHz dB 25 29 VSWR RF1-RF4 On DC - 3.0 GHz Ratio 1.2:1 1.6:1 RF1- RF4 Off DC - 3.0 GHz Ratio 1.4:1 1.8:1 RFC DC - 2.0 GHz Ratio 1.2:1 1.5:1 RFC DC - 3.0 GHz Ratio 1.6:1 2.2:1 1 Switching Speed T T 10%/90%, 90%/10% ns 15 50 rise fall T T 50% TTL to 90%/10% RF ns 50 150 on off Transients In-band (peak to peak) mV 50 150 1 dB Compression .05 GHz dBm +20 .5 - 3.0 GHz dBm +27 Input IP Two tone inputs 0.05 GHz dBm +35 3 up to +5 dBm 0.5 - 3.0 GHz dBm +46 V V +4.5 +5.0 +5.5 CC V V -8.0 -5.0 -4.75 EE V LOW-level input voltage V 0.0 0.8 IL V HIGH-level input voltage V 2.0 5.0 IH lin (Input Leakage Current) Vin = V or GND uA -1.0 1.0 CC Icc (Quiescent Supply Current) Vcntrl = V or GND uA 250 400 CC Icc V = Max, Vcntrl = V - 2.1 V mA 1.0 CC CC (Additional Supply Current Per TTL Input Pin) IEE VEE min to max, Vin = V or V mA -1.0 -0.2 IL IH 2,3,4 1. Decoupling capacitors (0.1 F) are required on the power supply lines. Absolute Maximum Ratings Parameter Absolute Maximum Max. Input Power Truth Table (Switch) 0.05 GHz +27 dBm 0.5 - 3.0 GHz +34 dBm TTL RF Common To: V -0.5V V +7.0V CC CC C1 C2 C3 C4 RF1 RF2 RF3 RF4 V -8.5V V +0.5V EE EE 1 0 0 0 On Off Off Off V - V -0.5V V - V 14.5V CC EE CC EE 0 1 0 0 Off On Off Off 5 Vin -0.5V Vin V + 0.5V CC 0 0 1 0 Off Off On Off Operating Temperature -40C to +85C 0 0 0 1 Off Off Off On Storage Temperature -65C to +125C 0 = TTL Low 1 = TTL High 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these surviv- ability limits. 4. When the RF input is applied to the terminated port, the absolute maximum power is +30 dBm. 5. Standard CMOS TTL interface, latch-up will occur if logic 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: