MASWSS0115 GaAs SPDT Switch Rev. V6 DC - 3.0 GHz Features Functional Schematic Insertion Loss: 0.3 dB 2.4 GHz C=39pF Isolation: 22 dB 2.4 GHz Power Consumption: <5 A +2.3V V1 RFC V2 Lead-Free SOT-363 Package Halogen-Free Mold Compound 260C Reflow Compatible RoHS* Compliant Version of SW-485 Description M/A-COMs MASWSS0115 is a GaAs PHEMT MMIC single pole, double throw (SPDT) switch in a RF1 GND RF2 low cost, lead-free SC-70 (SOT-363) surface mount PIN 1 plastic package. The MASWSS0115 is ideally suited for applications where very small size and low cost C=39pF C=39pF are required. Typical applications are dual band systems which require switching between small signal components Pin Configuration such as filter banks, single-band LNAs, converters, etc. This part can be used for low power, low loss Pin No. Function Description requirements in all systems operating up to 3 GHz, 1 RF1 RF Port 1 including PCS, GSM, DCS, Blue Tooth, and other 2 GND Ground receive chain applications. 3 RF2 RF Port 2 The MASWSS0115 is fabricated using a 0.5 micron 4 V2 Control 2 gate length GaAs PHEMT process. The process features full passivation for performance and 5 RFC RF Input reliability. 6 V1 Control 1 4,5 1,2 Absolute Maximum Ratings Ordering Information Parameter Absolute Maximum Part Number Package Input Power (0.5 - 3.0 GHz) MASWSS0115 Bulk packaging 2.5 V Control +27 dBm MASWSS0115TR-3000 3000 piece reel 5 V Control +34 dBm Voltage 8.5 volts MASWSS0115SMB Sample Board Operating Temperature -40 C to +85 C Separated Die on MASWSS0115-DIE 3 Grip Ring Storage Temperature -65 C to +150 C 1. Reference Application Note M513 for reel size information. 4. Exceeding any one or combination of these limits may cause 2. All sample boards include 5 loose parts. permanent damage to this device. 3. Die quantity varies. 5. M/A-COM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0115 GaAs SPDT Switch Rev. V6 DC - 3.0 GHz 6 Electrical Specifications: T = 25C, V = 0 V/2.5 V, Z = 50 A C 0 Parameter Test Conditions Units Min. Typ. Max. DC - 1 GHz dB 0.25 0.40 7 Insertion Loss 1 - 3 GHz dB 0.30 0.55 DC - 1 GHz dB 20 24 Isolation 1 - 3 GHz dB 22 Return Loss 0.05 - 3 GHz dB 20 IP2 Two Tone, +5 dBm/tone, 5 MHz Spacing, >50 MHz dBm 90 IP3 Two Tone, +5 dBm/tone, 5 MHz Spacing, >50 MHz dBm 46 V = 0 V/2.5 V dBm 21 C P1dB V = 0 V/3.0 V dBm 25 C Trise, Tfall 10% to 90% RF, 90% to 10% RF ns 35 Ton, Toff 50% control to 90% RF, 50% control to 10% RF ns 40 Transients In band mV 10 Control Current V = 2.5 V A 5 20 C 6. External DC blocking capacitors are required on all RF ports. 7. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz. 8,9 Die Bond Pad Layout Truth Table Control V1 Control V2 RFC-RF1 RFC-RF2 0 1 On Off 1 0 Off On 8. Differential voltage, V(state 1) - V(state 0), must be +2.3 V minimum. 9. 0 = 0 V 0.2 V, 1 = +2.3 V to 5.0 V Qualification Qualified to M/A-COM specification REL-201, Process Flow 2. Handling Procedures The following precautions should be observed to avoid dam- age: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electro- static discharge (ESD) and can be damaged by static elec- tricity. Proper ESD control techniques should be used when handling these devices. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: