MASWSS0167 2.5 V GaAs SPDT Switch Rev. V3 0.5 - 3.0 GHz Features Functional Schematic Low Voltage Operation: 2.5 V Low Insertion Loss: 0.3 dB 1 GHz Isolation: 34 dB 2.4 GHz 39 pF 0.5 micron GaAs pHEMT Process RF1 V1 39 pF Lead-Free 1.2 x 1.5 mm 6-Lead PQFN Package Halogen-Free Green Mold Compound RoHS Compliant* and 260C Reflow Compatible GND RFC 39 pF Description RF2 V2 The MASWSS0167 is a GaAs pHEMT MMIC single 39 pF 39 pF pole double throw (SPDT) switch in a lead-free 1.2 x 1.5 mm 6-lead PQFN package. This device is ideally suited for applications where low control voltage, low insertion loss, moderate isolation, small size and low cost are required. Pin Configuration Typical applications are for filter and antenna Pin No. Pin Name Description switching in wireless LAN systems that connect 1 RF1 RF In/Out separate receive functions to a common antenna, as well as other handset and general purpose switching 2 GND RF Ground applications. 3 RF2 RF In/Out The MASWSS0167 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process 4 V2 Control 2 features full passivation for performance and reliability. 5 RFC RF Common 6 V1 Control 1 1,2 Ordering Information Handling Procedures Please observe the following precautions to avoid Part Number Package damage: MASWSS0167TR-3000 3000 piece reel Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive MASWSS0167SMB Sample Test Board to electrostatic discharge (ESD) and can be 1. Reference Application Note M513 for reel size information. damaged by static electricity. Proper ESD control 2. All sample boards include 5 loose parts. techniques should be used when handling these devices. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0167 2.5 V GaAs SPDT Switch Rev. V3 0.5 - 3.0 GHz 3 Electrical Specifications : T = 25C, V = 0 V / +2.5 V, Z = 50 A C 0 Parameter Test Conditions Units Min. Typ. Max. 1 GHz 0.30 0.50 4 Insertion Loss 2 GHz dB 0.40 3 GHz 0.50 1 GHz 23 25 Isolation 2 GHz dB 27 3 GHz 24 VSWR 0.5 - 3.0 GHz Ratio 1.1 IP3 2-Tone, +10 dBm/tone, 5 MHz Spacing, > 50 MHz dBm 48 P1dB dBm 28 2.5 GHz, OFDM, QAM-64,54Mbps, EVM=2.5% 2.5 V 21.0 Linear Pout 3.0 V dBm 23.5 5.0 V 28.5 T , T 10% to 90% RF, 90% to 10% RF ns 30 RISE FALL T , T 50% control to 90% RF, and 50% control to 10% RF ns 35 ON OFF Transients In Band mV 60 Control Current V = 2.5 V A 1 5 C 3. For positive voltage control, external DC blocking capacitors are required on all RF ports. 4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 - 3 GHz. 5,6 7 Absolute Maximum Ratings Truth Table Parameter Absolute Maximum V1 V2 RFC - RF1 RFC - RF2 0 1 On Off Input Power +32 dBm (0.5 - 3 GHz, 2.5 V Control) 1 0 Off On Operating Voltage +8.5 volts 7. 0 = 0 0.2 V, 1 = 2.5 to 5 V Operating Temperature -40C to +85C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 2