MASWSS0181 GaAs SPDT 2.5 V High Power Switch Rev. V3 DC - 3.0 GHz Features Functional Schematic Low Voltage Operation: 2.5 V Harmonics: <-67 dBc +34 dBm & 1 GHz Pin 1 Pin 6 Low Insertion Loss: 0.40 dB 1 GHz High Isolation: 20 dB 2 GHz RF1 V1 0.5 micron GaAs pHEMT Process Lead-Free SOT-26 Package 100 pF 100% Matte Tin Plating over Copper GND RFC Halogen-Free Green Mold Compound 100 pF 260C Reflow Compatible RF2 V2 RoHS* Compliant Version of MASWSS0006 100 pF Description The MASWSS0181 is a GaAs PHEMT MMIC single pole two throw (SPDT) high power switch in a Pin Configuration lead-free SOT-26 package. The MASWSS0181 is ideally suited for applications where high power, low Pin Pin Name Description control voltage, low insertion loss, high isolation, small size and low cost are required. 1 RF1 RF Port 1 2 GND RF Ground Typical applications are for GSM and DCS handset systems that connect separate transmit and receive 3 RF2 RF Port 2 functions to a common antenna, as well as other 4 V2 Control 2 related handset and general purpose applications. This part can be used in all systems operating up to 5 RFC RF Common Port 3 GHz requiring high power at low control voltage. 6 V1 Control 1 The MASWSS0181 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability. 2,3 1 Absolute Maximum Ratings Ordering Information Part Number Package Parameter Absolute Maximum MASWSS0181 Bulk Packaging Input Power 38 dBm (0.5 - 3 GHz, 2.5 V Control) MASWSS0181TR-3000 3000 piece reel Voltage 8.5 V MASWSS0181SMB Sample Test Board Operating Temperature -40C to +85C 1. Reference Application Note M513 for reel size information. Storage Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0181 GaAs SPDT 2.5 V High Power Switch Rev. V3 DC - 3.0 GHz 4 Electrical Specifications: T = 25C, V = 0 V / 2.5 V, Z = 50 A C 0 Parameter Test Conditions Units Min. Typ. Max. DC - 1 GHz 0.40 0.65 5 Insertion Loss 1 - 2 GHz dB 0.50 2 - 3 GHz 0.75 DC - 1 GHz 23.0 26 Isolation 1 - 2 GHz dB 20 2 - 3 GHz 16 DC - 2 GHz 20 Return Loss dB 2 - 3 GHz 16 Two Tone, +26 dBm / tone, IP3 dBm 57 5 MHz Spacing, >50 MHz P0.1dB dBm 39 nd 2 Harmonic 1 GHz, P = 34 dBm dBc -75 IN rd 3 Harmonic 1 GHz, P = 34 dBm dBc -75 -67 IN T , T 10% to 90% RF, 90% to 10% RF s 0.04 RISE FALL 50% control to 90% RF, and T , T s 0.06 ON OFF 50% control to 10% RF Transients In Band mV 50 Control Current A 50 4. For positive voltage control, external DC blocking capacitors are required on all RF ports. 5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 100 pF for 0.5 - 3 GHz. 6,7 Qualification Truth Table Qualified to MACOM specification REL-201, Process V1 V2 ANT RF1 ANT - RF2 Flow -2. 1 0 On Off Handling Procedures 0 1 Off On Please observe the following precautions to avoid 6. Differential voltage, V (state 1) - V (state 0), must be +2.5 V damage: minimum and must not exceed +8 V. 7. 0 = -5 V to 2.5 V, 1 = -2.5 V to +5 V. Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: