Solderable GaAs Constant Gamma Flip-Chip Varactor Diode MAVR-000120-1411 Rev. V6 Features Chip Layout Usable Past 70 GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration Lead Free (RoHs Compliant) Available in Pocket Tape and Reel Front View (Circuit Side) Can withstand 500 Temperature Cycles (-65C to +150C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation. Can be Mounted with Solder or Conductive Epoxy Description The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a Back View (Operator Side) process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. Schematic R (V) C (V) L S J S Ordering Information Cparasitic Part Number Package MAVR-000120-14110P Pocket Tape Flip Chip Tuning Varactor Equivalent Circuit MAVR-000120-14110G Gel Pack 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Solderable GaAs Constant Gamma Flip-Chip Varactor Diode MAVR-000120-1411 Rev. V6 Electrical Specifications T = +25C A Breakdown Voltage I = 10 A, V = 20 V Minimum R b Reverse Leakage Current V =14 V, I = 100 nA Maximum R R Parameter Test Conditions Units Min. Typ. Max. V = 0 V, 1 MHz -1.1 R Total Capacitance V = 4 V, 1 MHz pF 0.30 0.40 R V = 10 V, 1 MHz 0.14 0.20 R Q Factor V = 4 V, 50 MHz pF 3000 R Gamma V = 2 - 12 V pF 0.9 1.1 R 1,2 Absolute Maximum Ratings Typical Performance Curves +25C Parameter Absolute Maximum Capacitance vs. Voltage Gamma = 1.00 +/- 10% (2 - 12 V) Power Dissipation 100 mW 1 Operating Temperature -40C to +125C Storage Temperature -65C to +150C Storage Temperature +260C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 0.1 1 10 100 Reverse Bias Voltage (V) * Specifications are subject to change without prior notification 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: