NPA1007 GaN on Silicon Power Amplifier Rev. V2 20 - 2500 MHz, 28 V, 10 W Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Broadband Operation from 20 - 2500 MHz 28 V Operation 12.5 dB Gain 2500 MHz 43% Drain Efficiency 2500 MHz 100% RF Tested Fully Matched at Input, Unmatched at Output Lead-Free 6 x 5 mm 8-lead PDFN Package Halogen-Free Green Mold Compound Functional Schematic RoHS* Compliant Description V 1 8 N/C G The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This RF / OUT RF 2 7 IN amplifier has been designed for saturated and linear V D Input operation and it is assembled in a lead-free 6 x 5 Match mm 8-lead PDFN plastic package. RF / OUT RF IN 3 6 V D The NPA1007 is a general purpose device suited for 9 narrowband and broadband applications in test and N/C 4 N/C 5 Paddle measurement, defense communications, land mobile radio and wireless infrastructure. Pin Configuration Pin Pin Name Function 1,2 Ordering Information 1 V Gate Voltage G Part Package 2, 3 RF RF Input IN 3 NPA1007 Bulk 4, 5 N/C No Connection NPA1007-TR0500 500 Piece Reel 6, 7 RF / V RF Output / Drain Voltage OUT D 3 NPA1007-TR0100 100 Piece Reel 8 N/C No Connection 4 NPA1007-SMB Evaluation Board 9 Paddle Ground 1. All sample boards include a part soldered down to the board. 3. All no connection pins may be left floating or connected to 2. Reference Application Note M513 for reel size information. ground. 4. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: NPA1007 GaN on Silicon Power Amplifier Rev. V2 20 - 2500 MHz, 28 V, 10 W 5 RF Electrical Specifications, CW Performance : T = 25C, A V = 28 V, I = 130 mA, Z = 50 DS DQ O Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain P = 0 dBm, 2500 MHz G - 12.5 - dB IN SS Power Gain P = 30 dBm, 2500 MHz G - 10.5 - dB IN P Drain Efficiency P = 30 dBm, 2500 MHz - 43 - % IN D Input Return Loss P = 30 dBm, 2500 MHz IRL - -14 - dB IN No Oscillation and Damage at all Load Mismatch Tolerance VSWR - - 10:1 ratio T Phase Angels and Power Levels 5. Performance in MACOM Evaluation Board. 6 RF Electrical Specifications, Pulsed Performance :T = 25C, A V = 28 V, I = 130 mA, Z = 50 , RF Pulse Width = 100 s, Duty Cycle = 10 % DS DQ O Parameter Test Conditions Symbol Min. Typ. Max. Units Power Gain P = 31 dBm, 2500 MHz G 10 11 - dB IN P Drain Efficiency P = 31 dBm, 2500 MHz 40 45 - % IN D Input Return Loss P = 31 dBm, 2500 MHz IRL - -20 -10 dB IN 6. Performance in MACOM Production Test Fixture tuned for 2500 MHz. DC Electrical Specifications: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -5 V, V = 28 V I - 0.8 4.8 mA GS DS DLK Gate-Source Leakage Current V = -5 V, V = 0 V I -4.8 -0.8 - mA GS DS GLK Gate Threshold Voltage V = 28 V, I = 4.8 mA V -2.5 -2.1 -0.5 V DS D T Gate Quiescent Voltage V = 28 V, I = 130 mA V -2.3 -1.9 -0.3 V DS D GSQ On Resistance V = 2 V, I = 48 mA R 0.5 1.0 1.5 DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I - 2.8 - A DS DMAX 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: