SW-313-PIN Matched GaAs SPDT Switch, Rev. V6 DC-3.0 GHz with TTL/CMOS Control Input Features Integral TTL Driver Functional Block Diagram Low DC Power Consumption Fast Switching Speed: 7 ns Typical Hermetic Surface Mount Package 50 Ohm Nominal Impedance RFC GND MIL-STD-883 Screening Available GND GND Lead-Free CR-9 Package GND GND 260C Reflow Compatible RoHS* Compliant RF2 RF1 GND GND Description GND GND M/A-COMs SW-313-PIN is a GaAs FET SPDT ab- GND Orientation Mark Vcc sorptive switch with integral silicon ASIC driver. C1 Vee Packaged in a 16-lead ceramic surface mount pack- age, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW-313-PIN is ideally suited for use where fast speed, low power con- sumption and broadband applications are required. MIL-STD-883 screening available. Pin Configuration Pin No. Function Pin No. Function Ordering Information 1 Vee 9 RFC Part Number Package 2 GND 10 GND SW-313-PIN Bulk Packaging 3 GND 11 GND SW-313-TB Sample Test Board 4 GND 12 RF1 5 RF2 13 GND Note: Reference Application Note M513 for reel size 6 GND 14 GND information. 7 GND 15 Vcc 8 GND 16 C1 The metal bottom of the case must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: SW-313-PIN Matched GaAs SPDT Switch, Rev. V6 DC-3.0 GHz with TTL/CMOS Control Input 1,2 Electrical Specifications: (From 55C to +85C), Z = 50 0 Parameter Test Conditions Frequency Units Min Typ Max Insertion Loss DC - 3000 MHz dB 1.2 DC - 2000 MHz dB 1.1 DC - 1000 MHz dB 0.9 DC - 500 MHz dB 0.8 VSWR DC - 3000 MHz Ratio 1.50:1 DC - 2000 MHz Ratio 1.40:1 DC - 1000 MHz Ratio 1.35:1 DC - 500 MHz Ratio 1.30:1 Isolation DC - 3000 MHz dB 35 DC - 2000 MHz dB 43 DC - 1000 MHz dB 48 DC - 500 MHz dB 53 Trise, Tfall 10% to 90% ns 7 Ton, Toff 1.3V CTL to 90% / 10% ns 18 Transients In-Band mV 25 1 dB Compression Input Power 0.05 GHz dBm +25 0.5 GHz to 3 GHz dBm +30 IP2 Two-Tone Input Power up to +5 0.05 GHz dBm +60 dBm 0.5 GHz to 3 GHz dBm +65 IP3 Two-Tone Input Power up to +5 0.05 GHz dBm +40 dBm 0.5 GHz to 3 GHz dBm +46 Vin Low 0V to 0.8V A 1 Vin High 2.0V to 5.0V A 1 Vcc +5.0V 10% mA 1 Vee -5.0V to -8.0V mA 1 1. All specifications apply when operated with bias voltages of +5V for Vcc and 5V for Vee. 2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: