XB1014-QT-EV1 MACOM

XB1014-QT Buffer Amplifier Rev. V3 37.0 - 40.0 GHz Features Functional Schematic 21.0 dB Small Signal Gain +22.0 dBm Psat VD1 VD2 VD3 +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias Lead-free 3 mm 16-lead PQFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260C Reflow Compatible GND GND Description RFIN RFOUT The XB1014-QT is a three stage 37.0-40.0 GHz GaAs MMIC buffer amplifier that has a small signal GND GND gain of 21.0 dB and 20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage VG1 VG2 VG3 with broadband performance at a very low cost. The device comes in an RoHS compliant 3x3mm QFN surface mount package offering excellent RF 1 Pin Configuration and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Pin No. Function Pin No. Function Microwave Radio applications. 3 RF Input 10 RF Output 5 Gate 1 Bias 13 Drain 3 Bias Ordering Information Part Number Package 6 Gate 2 Bias 14 Drain 2 Bias XB1014-QT-0G00 bulk quantity 7 Gate 3 Bias 15 Drain 1 Bias XB1014-QT-0G0T tape and reel 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. XB1014-QT-EV1 evaluation board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XB1014-QT Buffer Amplifier Rev. V3 37.0 - 40.0 GHz Electrical Specifications: 37-40.15 GHz (Ambient Temperature T = 25C) Parameter Units Min. Typ. Max. Input Return Loss (S11) dB - 7.0 40.0 Output Return Loss (S22) dB - 10.0 - Small Signal Gain (S21) dB 17.0 21.0 - Reverse isolation (S12) dB - 40.0 24.5 Output Power for 1dB Compression Point (P1dB) dBm - 20.0 - Saturated Output Power (Psat) dBm 19.5 22.0 - Output IP3 (Psci = 4 dBm) dBm 27.0 30.5 - Drain Bias Voltage (Vd1,2,3) V - 4.0 4.0 Gate Bias Voltage (Vg1,2,3) V -1.0 -0.3 -0.1 Supply Current (Id1,2,3) mA - 250 300 2,3 Absolute Maximum Ratings Absolute Parameter Max. Supply Voltage (Vd1,2,3) +4.3 V Supply Voltage (Vg1,2,3) -1.5V < Vg < 0V Input Power (Pin) +20 dBm Abs. Max Junction/Channel Temp MTTF Graph Max. Operating Junction/Channel Temp 150C Continuous Power Dissipation (Pdiss) at 1.2 W 85C Thermal Resistance 47C/W -55C to MTTF Operating Temperature (Ta) Graph Storage Temperature (Tstg) -65C to +165C See solder Mounting Temperature reflow profile ESD Min. - Machine Model (MM) Class A ESD Min. - Human Body Model (HBM) Class 1A MSL Level MSL1 2. Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 3. For saturated performance it is recommended that the sum of (2*Vdd + abs (Vgg)) <9V 2 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: