MPKC2SA/CA200U60 600V FRD Module
MPKC2SA/CA200U60
600V FRD Module
General Description Features
Ultra-FRD module devices are optimized to reduce losses
Repetitive Reverse Voltage : V = 600V
RRM
and EMI/RFI in high frequency power conditioning electrical
Low Forward Voltage : V (typ.) = 1.45V
F
systems.
Average Forward Current : I (Av.)=200A @T =100
F C
These diode modules are ideally suited for power converters,
Ultra-Fast Reverse Recovery Time : t (typ.) = 45ns
rr
motors drives and other applications where switching losses
Extensive Characterization of Recovery Parameters
are significant portion of the total losses.
Reduced EMI and RFI
Isolation Type Package
Applications
High Speed & High Power converters, Welders
Various Switching and Telecommunication Power Supply
Ordering Information
Product
MPKC2SA200U60 MPKC2CA200U60
Name
Side Common Center Common
& N-type & N-type
Optional
E301932
Information
5DM-2
o
Absolute Maximum Ratings @Tc = 25 C (Per Leg)
Characteristics Conditions Symbol Rating Unit
Repetitive Peak Reverse Voltage V 600 V
RRM
Reverse DC Voltage V 480 V
R(DC)
o
T =25 C 400 A
C
Average Forward Current Resistive Load I
F(AV)
o
TC=100 C 200 A
One Half Cycle at 60Hz,
Surge(non-repetitive) Forward Current I 3300 A
FSM
Peak Value
Value for One Cycle Current,
2 2 3 2
I t for Fusing I t 45.0* 10 A s
t = 8.3ms, T= 25 Start
w j
Junction Temperature T -40 ~ 150
J
Maximum Power Dissipation P 540 W
D
Isolation Voltage @AC 1 minutes V 2500 V
isol
Storage Temperature T -40 ~ 150
stg
Mounting Torque - 4.0 N.m
Terminal Torque Typical Including Screws - 3.0 N.m
Weight - 180 g
1
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd. MPKC2SA/CA200U60 600V FRD Module
o
Electrical Characteristics @Tc = 25 C(unless otherwise specified)
Characteristics Conditions Symbol Min. Typ. Max. Unit
Cathode Anode Breakdown Voltage I =100uA V 600 - - V
R R
T =25 - 1.45 1.8
C
Diode Maximum Forward Voltage I =200A V V
F FM
T =100 - 1.35 -
C
T =100,
c
Diode Peak Reverse Recovery Current T =100 IRRM - - 1.0 mA
C
V applied
RRM
IF =1A,VR=30V
Diode Reverse Recovery Time T =25 t - 45 60 ns
C rr
di/dt = -400A/uS
T =25 - 110 140
C
I =200A,V =300V
F R
Diode Reverse Recovery Time t ns
rr
di/dt = -400A/uS
T =100 - 180 -
C
Thermal Characteristics
Characteristics Conditions Symbol Min. Typ. Max. Unit
Thermal Resistance(Isolation Type) Junction to Case R - - 0.23 /W
th(j-c)
2
Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd.