X-On Electronics has gained recognition as a prominent supplier of 1N8149USe3 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. 1N8149USe3 ESD Suppressors / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

1N8149USe3 Microchip

1N8149USe3 electronic component of Microchip
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Part No.1N8149USe3
Manufacturer: Microchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors TVS Diodes Hi Rel TVS
Datasheet: 1N8149USe3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 24.156 ea
Line Total: USD 2415.6 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 100
Multiples : 100
100 : USD 24.156

   
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We are delighted to provide the 1N8149USe3 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N8149USe3 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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1N8149US 1N8182US Voidless-Hermetically-Sealed Unidirectional 150 W Available Low-Capacitance Transient Voltage Suppressors DESCRIPTION This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak standoff voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard- glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability A SQ-MELF applications. These devices are also available in axial leaded packages for thru-hole mounting. Package Important: For the latest information, visit our website 1N8149US 1N8182US MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps feature tin/lead or RoHS compliant matte/tin plating over copper. MARKING: None POLARITY: Cathode band MOUNTING: Any position TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 539 milligrams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N8149 US (e3) Reliability Level RoHS Compliance MQ (reference JAN) e3 = RoHS compliant MX (reference JANTX) Blank = non-RoHS compliant MV (reference JANTXV) MS (reference JANS) MELF Surface Mount Blank = Commercial Type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D I Breakdown Current: The current used for measuring Breakdown Voltage V (BR) (BR) Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. C T V Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction. WIB I Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (V ). IB WIB T4-LDS-xxxx, Rev x (10-02-14) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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M4S
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MICREL SEMICONDUCTOR
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Microsemi Analog Mixed Signal Group
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