X-On Electronics has gained recognition as a prominent supplier of 2N3501E3 across the USA, India, Europe, Australia, and various other global locations. 2N3501E3 are a product manufactured by Microchip. We provide cost-effective solutions for 2N3501E3, ensuring timely deliveries around the world.

2N3501E3 Microchip

2N3501E3 electronic component of Microchip
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Part No.2N3501E3
Manufacturer: Microchip
Category: Unclassified
Description: n/a
2N3501E3 is a NPN high voltage bipole transistor from Microchip with a collector-emitter voltage rating of 100V.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 30.8503 ea
Line Total: USD 30.85 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 36.1791

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 30.8503

   
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We are delighted to provide the 2N3501E3 from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3501E3 and other electronic components in the Microchip manufacturer and beyond.

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The 2N3501E3 is a PNP Darlington Transistor made by Microchip Technology. This transistor has a current gain of over 200 and is designed for use in a variety of power switching applications. It has an operating temperature range of -50 to +150 degrees Celsius and can be used in conjunction with logic level MOSFETs for protection against high-voltage spikes. The 2N3501E3 also features an insulated gate for protection against static discharge and spike voltages. Lastly, this transistor comes in a standard TO-92 package, making it ideal for prototyping.

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