X-On Electronics has gained recognition as a prominent supplier of 2N3585 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3585 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3585 Microchip

2N3585 electronic component of Microchip
2N3585 Microchip
2N3585 Bipolar Transistors - BJT
2N3585  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N3585
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Power BJT
Datasheet: 2N3585 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 32.775 ea
Line Total: USD 32.78 
Availability - 28
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 32.775
100 : USD 29.117

   
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We are delighted to provide the 2N3585 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3585 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level JAN 2N3584 2N3585 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3584 2N3585 Units - Emitter Voltage 250 300 V CEO - 375 500 V - 300 400 V CER Emitter - 6.0 V EBO Base Current I 1.0 B 2.0 I C 0 Total Power Dissipation T = +25 2.5 W A P T 0 T = 35 W C 0 - 65 to +200 C T T J , THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO - 66* (TO - 0 Thermal Resistance, Junction - - Case 5.0 R 0 0 1) Derate linearly 14.85 mW/ > +25 C A 0 0 2) D erate linearly 200 mW/ > +25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Brea 250 I V C CEO 300 - 375 I V C CER 500 - Emitter Cutoff Current 5.0 V = 150 Vdc I CE CEO - Emitter Cuto ff Current 1.0 V = 300 Vdc, V = 1.5 Vdc I CE BE CEX 1.0 V = 400 Vdc, V = 1.5 Vdc CE BE Emitter - 0.5 V = 6.0 Vdc I EB EBO 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (9 78) 689 - 0803 1 2N3584, 2N3585 JAN SERIES of 2 Page mAdc Base Cutoff Current 2N3585 2N3584 mAdc Collector mAdc Collector 2N3585 (BR) 2N3584 = 15 mAdc Vdc Base Breakdown Voltage Collector 2N3585 (BR) 2N3584 = 10 mAdc Vdc kdown Voltage Collector Package Outline *See Appendix A for C for T C for T JC C/W to 213AA) stg Operating & Storage Junction Temperature Range C +25 (2) C (1) Adc Collector Current Adc Vdc Base Voltage Vdc Base Voltage Collector CBO Vdc Base Voltage or Collect Vdc Collector ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 25 100 I = 10 Vdc h C C E FE 40 I C CE - Emitter Saturation Voltage 0.75 I V C B CE(sat) Base - Emitter Saturation Voltage 1.4 I V C B BE(sat) DYNAMIC CHARACTERISTICS - Signal Short - Circuit Forward Current Transfer Ratio 3.0 15 I = 10 Vdc, f = 5.0 MHz h C CE Small - Signal Short - Circuit Forward Current Transfer Ratio 25 200 I = 10 Vdc, f = 1.0 kHz h C CE Output Capacitance 120 V = 0, 100 kHz 1.0 MHz C E obo SWITCHING CHARACTERISTICS Turn - t 3.0 V = 29 s C C Turn - t 7.0 s V = - I = 29 C B C SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t = 1.0 s C Test 1 V CE C Test 2 V CE C Test 3 V = I CE C V = CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle 2N3585 = 17 mAdc 300 Vdc, I 2N3584 = 37 mAdc 250 Vdc, = 350 mAdc = 100 Vdc, I = 2.0 Adc = 17.5 Vdc, I B CC off = 100 mAdc R = 1.0 Adc I = 30 Vdc I Off Time B CC on = 100 mAdc R = 1.0 Adc I = 30 Vdc I On Time CB f = 10 Vdc, I pF fe = 1.0 Adc, V fe = 200 mAdc, V Magnitude of Common Emitter Small = 0.1 Adc = 1.0 Adc, I Vdc = 0.125 Adc = 1.0 Adc, I Vdc Collector = 10 Vdc = 100 mAdc, V = 1.0 Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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