X-On Electronics has gained recognition as a prominent supplier of 2N3867JANTX across the USA, India, Europe, Australia, and various other global locations. 2N3867JANTX are a product manufactured by Microchip. We provide cost-effective solutions for 2N3867JANTX, ensuring timely deliveries around the world.

2N3867JANTX Microchip

2N3867JANTX electronic component of Microchip
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Part No.2N3867JANTX
Manufacturer: Microchip
Category: Unclassified
Description: Trans GP BJT PNP 40V 3A 3-Pin TO-5 Bag
Datasheet: 2N3867JANTX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 39.629 ea
Line Total: USD 3962.9 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 100
Multiples : 100
100 : USD 39.629

   
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We are delighted to provide the 2N3867JANTX from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3867JANTX and other electronic components in the Microchip manufacturer and beyond.

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TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/350 Devices Qualified Level JAN 2N3867 2N3868 JANTX 2N3867S 2N3868S JANTXV MAXIMUM RATINGS 2N3867 2N3868 Symbol Ratings 2N3867S 2N3868S Unit - Emitte 40 60 V CEO - 40 60 V Emitter - 4.0 TO - 5* V EBO 3.0 2N3867, 2N3868 I C 0 Total Power Dissipation @ T = 25 C 1.0 W A P 0 T @ T = 25 C 10 W C 0 Operating & Storage Temperature Range T T - 55 to +200 C G THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO - 39* 0 Thermal Resistance, Junction - - Case 17.5 (TO - R 0 0 1) Derate linearly 5.71 mW/ > +25 A 0 0 2) Derate linearly 57.1 mW/ > +25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 40 I = 100 2N3867, S V C C 60 2N3868, S - 40 I 2N3867, S V C CEO 60 2N3868, S Emitter - V EBO 4.0 I = 100 E - Emitter Cutoff Current 1.0 V = 2.0 Vdc, V = 40 Vdc 2N3867, S I EB CE CEX 1.0 V = 2.0 Vdc, V = 60 Vdc 2N3868, S EB CE - 10 0 V = 40 Vdc 2N3867, S I V = 60 Vdc 2N3868, S Emitter - I 100 EBO V = 4 Vdc EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Base Cutoff Current CB CBO CB Adc Base Cutoff Current Collector Adc Collector Adc (BR) Vdc Base Breakdown Voltage (BR) = 20 mAdc Vdc Emitter Breakdown Voltage Collector BO (BR) Adc Vdc Base Breakdown Voltage Collector Package Outline *See Appendix A for C for T C C C for T 2N3867S, 2N3868S JC 205AD) C/W to ST OP, (2) (1) Adc Continuous -- Collector Current Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc r Voltage Collector 2N3867, S; 2N3868, S JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 50 I = 1.0 Vdc 2N3867, S C CE 35 2N3868, S 40 200 I = 2.0 Vdc 2N3867, S C CE h FE 30 150 2N3868, S 25 I = 3.0 Vdc 2N3867, S C CE 20 2N3868, S 20 I = 3.0 Adc, V = 5.0 Vdc C CE - Emitter Saturation Voltage 0.5 I C B V CE(sat ) 0.75 I C B 1.5 I C B Base - Emitter Saturation Voltage 1.0 I C B V BE(sat) 0.9 1.4 I C B 2.0 I C B DYNAMIC CHARACTERISTICS - Signal Short Ci rcuit Forward Current Transfer Ratio 3.0 12 h I = 5.0 Vdc, f = 20 MHz C CE Output Capacitance C obo 120 V = 0, 100 kHz 1.0 MHz E C ibo 800 V = 0, 100 kHz 1.0 MHz EB C SWITCHING CHARACTERISTICS t V = - = 0, 35 CC d s t Rise Time 65 s I = r C B1 t V = - = 0, 500 CC s s t Fall Time 100 s I = I = f C B1 B2 Turn - t 100 s V = 30, I CC C B Turn - t 600 s V = 30, I CC C B SAFE OPERATING AREA DC Tests 0 T = 25 C, 1 Cycle, t = 1.0 s C Test 1 V CE C Test 2 V = 2N3867, S CE C V 2N3868, S CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 2 Page 2 of s, Duty Cycle = 80 mAdc = 60 Vdc, I 160 mAdc = 40 Vdc, I = 3.0 Adc = 3.33 Vdc, I = 150 mAdc = 1.5 Adc, I off Off Time = 150 mAdc = 1.5 Adc, I on On Time 150 mAdc = 1.5Adc, I EB 30 Vdc, V Storage Time 150 mAdc = 1.5 Adc, I EB 30 Vdc, V Delay Time f = 3.0 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF = 100 mAdc, V fe Magnitude of Common Emitter Small = 250 mAdc = 2.5 Adc, I = 150 mAdc = 1.5 Adc, I Vdc = 50 mAdc = 500 mAdc, I = 250 mAdc = 2.5 Adc, I = 150 mAdc = 1.5 Adc, I Vdc = 50 mAdc = 500 mAdc, I Collector All Types = 2.5 Adc, V = 1.5 Adc, V = 500 mAdc, V Forward

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8542320051
ATM
Atmel
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