TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 80 V CEO Collector-Base Voltage V 100 V CBO Emitter-Base Voltage V 5.5 V EBO I 5.0 C Collector Current A (3) I 10 C (1) Total Power Dissipation T = +25C 2.0 A P W (2) T T = +25C 58 C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg Thermal Resistance, Junction-to Case 3.0 C/W R JC TO-59 Thermal Resistance, Junction-to Ambient R 88 C/W JA Note: 1) Derate linearly 11.4 mW/C for T > +25C A 2) Derate linearly 331 mW/C for T > +25C C 3) This value applies for P 8.3 ms, duty cycle 1% W ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V 80 Vdc (BR)CEO I = 100mAdc C Collector-Emitter Cutoff Current I 50 Adc CEO V = 40Vdc, I = 0 CE B Collector-Emitter Cutoff Current V = 60Vdc, V = 0Vdc I 1.0 Adc CE BE CES V = 100Vdc, V = 0Vdc 1.0 mAdc CE BE Emitter-Base Cutoff Current V = 4.0Vdc, I = 0 I 1.0 mAdc BE C EBO V = 5.5Vdc, I = 0 1.0 BE C T4-LDS-0038 Rev. 2 (081508) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward-Current Transfer Ratio I = 50mAdc, V = 5.0Vdc 2N5002 20 --- C CE I = 2.5Adc, V = 5.0Vdc 30 90 C CE I = 5.0Adc, V = 5.0Vdc 20 --- C CE h FE I = 50mAdc, V = 5.0Vdc 2N5004 50 --- C CE I = 2.5Adc, V = 5.0Vdc 70 200 C CE I = 5.0Adc, V = 5.0Vdc 40 --- C CE Base-Emitter Voltage Non-Saturated V 1.45 Vdc BE V = 5.0Vdc, I = 2.5Adc CE C Collector-Emitter Saturation Voltage V Vdc I = 2.5Adc, I = 250mAdc CE(sat) 0.75 C B I = 5.0Adc, I = 500mAdc 1.5 C B Base-Emitter Saturation Voltage V Vdc BE(sat) I = 2.5Adc, I = 250mAdc 1.45 C B I = 5.0Adc, I = 500mAdc 2.2 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current Transfer Ratio h I = 500mA, V = 5.0Vdc, f = 10MHz 2N5002 fe 6.0 C CE 2N5004 7.0 Output Capacitance C 250 pF obo V = 10Vdc CB SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time I = 5Adc I = 500mAdc t 0.5 s C B1 on Storage Time I = -500mAdc t 1.4 s B2 s Fall Time V = 3.7Vdc t 0.5 s BE(OFF) f Turn-Off Time R = 6 t 1.5 s L off SAFE OPERATING AREA DC Tests T = +25C, V = 0, tp = 1s, 1 Cycle C CE Test 1 V = 12Vdc, I = 5.0Adc CE C Test 2 V = 32Vdc, I = 1.7Adc CE C Test 3 V = 80Vdc, I = 100mAdc CE C T4-LDS-0038 Rev. 2 (081508) Page 2 of 2