X-On Electronics has gained recognition as a prominent supplier of 2N5582 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5582 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5582 Microchip

2N5582 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N5582
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BJTs
Datasheet: 2N5582 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

114: USD 8.9087 ea
Line Total: USD 1015.59

Availability - 0
MOQ: 114  Multiples: 114
Pack Size: 114
Availability Price Quantity
0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 8.372
500 : USD 8.3605
5000 : USD 8.0385

   
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We are delighted to provide the 2N5582 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5582 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit - Emitter Voltage 50 V CEO - 75 V Emitter - 6.0 V EBO 800 I C 0 Total Power Dissipation T = 25 0.5 W A P 0 T T = 25 2.0 W C TO - 46* 0 - 55 to +200 C T T , (TO - op 0 0 1) Derate linearly 2.86 mW / > 25 C A 0 0 2) Derate linearly 11.43 mW/ > 25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 50 CEO I C - V = 60 Vdc I 10 V = 75 Vdc 10 Emitter - V I EB EBO 10 V 10 EB 6 Lake Str 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page eet, Lawrence, MA 01841 Adc = 6.0Vdc Adc = 4.0Vdc Base Cutoff Current CB Adc CBO CB Adc Base Cutoff Current Collector = 10 mAdc (BR) Vdc Emitter Breakdown Voltage ctor Colle package outline *See appendix A for C for T C for T stg 206AB) Operating & Storage Junction Temperature Range C (2) C (1) mAdc Collector Current Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc Collector 2N5581, 2N5582 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio I = 10 Vdc C CE 30 I = 10 Vdc C CE 35 h FE I = 10 Vdc 40 C CE I = 10 Vdc 40 120 C CE 20 I = 10 Vdc C CE I = 10 Vdc C CE 50 h FE I =1.0 = 10 Vdc 75 C CE 100 I = 10 Vdc C CE 300 100 I = 10 Vdc C CE 30 I = 10 Vdc C CE - Emitter Saturation Voltage 0.3 I V B CE(sat) 1.0 I = 5 C B Base - Emitter Voltage I 1.2 V 0.6 B BE(sat) 2.0 I C B DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio 30 I = 10 Vdc h C CE 50 5582 Forward Current Transfer Ratio h 2.5 I = 20 Vdc, f = 100 MHz C CE Output Capacitance C 8.0 obo V = 0, 100 kHz 1.0 MHz E C 25 i bo V = 0, 100 kHz 1.0 MHz EB C SWITCHING CHARACTERISTICS Turn - t 35 s V = C B1 Turn - t 300 s V = I = C B1 B2 (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle CC 15 mAdc = 150 mAdc I = 30 Vdc I off Off Time CC 15 mAdc = 150 mAdc I = 30 Vdc I on On Time f = 0.5 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF = 50 mAdc, V fe 2N fe 2N5581 = 1.0 mAdc, V = 50 mAdc = 500 mAdc, I C Vdc = 15 mAdc = 150 mAdc, I = 50 mAdc 00 mAdc, I C = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V m Adc, V 2N5582 = 0.1 mAdc, V = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V =1.0 m Adc, V 2N5581 = 0.1 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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