X-On Electronics has gained recognition as a prominent supplier of APT2X100DQ60J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X100DQ60J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT2X100DQ60J Microchip

APT2X100DQ60J electronic component of Microchip
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Part No.APT2X100DQ60J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DQ
Datasheet: APT2X100DQ60J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 22.407 ea
Line Total: USD 22.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 22.407
500 : USD 20.669
1000 : USD 20.35
5000 : USD 19.877

0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 28.5768
2 : USD 27.0299

   
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We are delighted to provide the APT2X100DQ60J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X100DQ60J and other electronic components in the Discrete Semiconductor Modules category and beyond.

Image Part-Description
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Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

23 2 3 2 3 1 14 1 4 4 Anti-Parallel Parallel APT2x100DQ60J APT2x101DQ60J APT2x101DQ60J 600V 100AUL Recognize file E145592 ISOTOP APT2x100DQ60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Increased System Power Uninterruptible Power Supply (UPS) High Blocking Voltage Density Induction Heating Low Leakage Current High Speed Recti ers Avalanche Energy Rated MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Characteristic / Test Conditions APT2x101 100DQ60J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 600 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 82C, Duty Cycle = 0.5) I 100 C F(AV) I RMS Forward Current (Square wave, 50% duty) Amps 146 F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 1000 J FSM E mJ Avalanche Energy (1A, 40mH) 20 AVL T ,T C -55 to 175 Operating and StorageTemperature Range J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 100A 1.6 2.2 F V I = 200A Forward Voltage Volts 2.05 F F I = 100A, T = 125C 1.28 F J V = 600V 25 R I Maximum Reverse Leakage Current A RM V = 600V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 190 T R Microsemi Website - DYNAMIC CHARACTERISTICS APT2x101 100DQ60J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 34 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 160 rr I = 100A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 290 rr V = 400V, T = 25C R C I Maximum Reverse Recovery Current - 5 - Amps RRM t Reverse Recovery Time - 220 ns rr I = 100A, di /dt = -200A/s Q F F - 1530 nC Reverse Recovery Charge rr V = 400V, T = 125C R C I - 13 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 100 ns rr I = 100A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 2890 nC rr V = 400V, T = 125C R C I - 44 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R .42 C/W Junction-to-Case Thermal Resistance JC V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts Isolation 2500 oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.45 0.40 0.9 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.15 0.3 t 2 0.10 t 1 t Duty Factor D = / 0.1 2 0.05 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4208 Rev H 2-2011 Z , THERMAL IMPEDANCE (C/W) JC P DM

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