www.MICROSEMI.com HUM2001 HUM2020 HUM2001 HUM2020 PIN DIODE TM High Power Stud RoHS Compliant Versions Available KEY FEATURES DESCRIPTION With high isolation, low loss, and low distortion characteristics, High Power Stud Mount this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability Package. are critical. High Zero Bias Impedance Its advantages also include the low forward bias resistance and Very Low Inductance and high zero bias impedance that are essential for low loss, high Capacitance. isolation and wide bandwidth performance. No Internal Lead Straps. Hermetically sealed, SOGO passivated PIN chips with full-faced Small Mechanical Outline. metallurgical bonds on both sides are utilized to achieve high reliability and high surge capability. RoHS compliant packaging 1 Available IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com VOLTAGE RATINGS 25C (unless otherwise specified) Part Number Reverse Voltage 10uA (V) HUM2001 100 HUM2005 500 HUM2010 1000 HUM2015 1500 HUM2020 2000 APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. 1 The HUM2000 series of products can be supplied with a RoHS compliant finish. Order HUMX2001 HUMX2020. Consult factory for details. Microsemi Page 1 Copyright 2006 Microwave Products Rev: 2009-05-14 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 www.MICROSEMI.com ELECTRICALS ELECTRICALS HUM2001 HUM2020 PIN DIODE TM High Power Stud RoHS Compliant Versions Available ELECTRICAL PARAMETERS 25C (unless otherwise specified) Parameter Symbol Conditions MIN. TYPICAL MAX. Units Total Capacitance C V = 100V, F = 1 MHz 3.4 4.0 pF T R Series Resistance R I = 500 mA, F = 4 MHz 0.1 0.2 Ohms S F Carrier Lifetime T I = 10 mA/100 V 10 30 s L F Reverse Current I V = Voltage rating 10 A R R Parallel Resistance R f = 10MHz, V = 100V 200 kOhms P R Forward Voltage V I = 500mA 0.85 1.0 V F F ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Parameter Symbol Limits Units 13 W Average Power Dissipation P D 100 A Non-Repetitive Sinusoidal Surge Current (8.3 ms) I Storage Temperature Range T -65 to + 175 C STG Operating Temperature Range T -65 to + 175 C OP Thermal resistance Junction-to Case 7.5 C/W R JC C Stud Only Microsemi Page 2 Copyright 2006 Microwave Products Rev: 2009-05-14 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748