X-On Electronics has gained recognition as a prominent supplier of JANSF2N2222AUB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANSF2N2222AUB Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANSF2N2222AUB Microchip

JANSF2N2222AUB electronic component of Microchip
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Part No.JANSF2N2222AUB
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Microsemi
Single-channel full-bridge H-bridge gate driver with OCP and OTP.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 50
Multiples : 1
50 : USD 129.747
500 : USD 86.2174
1000 : USD 73.2976
5000 : USD 66.6242
N/A

   
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We are delighted to provide the JANSF2N2222AUB from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANSF2N2222AUB and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The JANSF2N2222AUB is a NPN bipolar transistor manufactured by Microchip and is typically used for switching and amplification applications. It has a maximum voltage of 40V and a continuous collector current of 800mA, making it suitable for a wide range of applications. The transistor has a hFE of 400 and a thermal resistance of 217K/W, meaning it can dissipate a large amount of heat without suffering permanent damage. This makes it an ideal choice for power amplifier design.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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