X-On Electronics has gained recognition as a prominent supplier of Jantx2N3700 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. Jantx2N3700 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Jantx2N3700 Microchip

Jantx2N3700 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.Jantx2N3700
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: Jantx2N3700 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 6.075 ea
Line Total: USD 30.38

Availability - 302
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
302
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 5
Multiples : 1
5 : USD 6.075
50 : USD 5.4
100 : USD 4.975
250 : USD 4.9375
500 : USD 4.9125
1000 : USD 4.8875
2500 : USD 4.8625
5000 : USD 4.8375

300
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 15
Multiples : 5
15 : USD 7.9607
50 : USD 7.0762
100 : USD 6.5192
250 : USD 6.4701
500 : USD 6.4373

134
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 11
Multiples : 1
11 : USD 6.615

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Maximum Operating Temperature
Packaging
Brand
Collector Current Dc Max
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain Min
Operating Temperature Classification
Rad Hardened
Collector Current Dc
Dc Current Gain
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the Jantx2N3700 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Jantx2N3700 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3700 Qualified Levels: JAN, JANTX, Low Power NPN Silicon Transistor Available on JANTXV, and JANS commercial Qualified per MIL-PRF-19500/391 versions DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications. Important: For the latest information, visit our website 2N3700 MECHANICAL and PACKAGING CASE: Hermetically sealed, nickel plated kovar base, nickel cap. TERMINALS: Gold plate over nickel, kovar for JANS. Gold plate over nickel, kovar, solder dipped for JAN, JANTX, and JANTXV. MARKING: Part number, date code, manufacturers ID. WEIGHT: Approximately 0.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3700 (e4) Reliability Level RoHS Compliance JAN = JAN level e4 = RoHS compliant (without JANTX = JANTX level solder dip) JANTXV = JANTXV level Blank = non-RoHS compliant JANS = JANS level Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Frequency f Base current (dc) I B Emitter current (dc) I E T Ambient temperature A T Case temperature C V Collector to base voltage (dc) CB V Collector to emitter voltage (dc) CE V Emitter to base voltage (dc) EB T4-LDS-0185-2, Rev. 1 (4/24/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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