Product Information

Jantx2N6352

Jantx2N6352 electronic component of Microchip

Datasheet
Trans Darlington NPN 80V 5A 4-Pin(3+Tab) TO-213AA

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 425.4429 ea
Line Total: USD 425.44

89 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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Jantx2N6352
Microchip

1 : USD 393.5625

     
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2N6352 and 2N6353 Qualified Levels: JAN, JANTX, and NPN Darlington Power Silicon Transistor Available on JANTXV commercial Qualified per MIL-PRF-19500/472 versions DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. Important: For the latest information, visit our website 2N6352 and 2N6353 MECHANICAL and PACKAGING CASE: Industry standard TO-213AA (3-pin TO-66), hermetically sealed FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating (on commercial grade only). Solderable per MIL-STD-750 method 2026. POLARITY: NPN (see schematic) MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws WEIGHT: Approximately 6 grams See package dimensions on last page. PART NOMENCLATURE JAN 2N6352 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Base current: The value of the dc current into the base terminal. I B Collector current: The value of the dc current into the collector terminal. I C Emitter current: The value of the dc current into the emitter terminal. I E T Case temperature: The temperature measured at a specified location on the case of a device. C Collector-base voltage: The dc voltage between the collector and the base. V CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. V CC Collector-emitter voltage: The dc voltage between the collector and the emitter. V CE Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base V CEO terminal is open-circuited. V Emitter-base voltage: The dc voltage between the emitter and the base EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal V EBO open-circuited. T4-LDS-0315, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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