ON Semiconductor MPSW63 One Watt Darlington * MPSW64 Transistors *ON Semiconductor Preferred Device PNP Silicon These devices are available in Pbfree package(s). Specifications herein apply to both standard and Pbfree devices. Please see our website at www.onsemi.com for specific Pbfree orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS 1 2 MPSW63 3 Rating Symbol MPSW64 Unit Collector Emitter Voltage V 30 Vdc CES CASE 2910, STYLE 1 TO92 (TO226AE) Collector Base Voltage V 30 Vdc CBO Emitter Base Voltage V 10 Vdc EBO Collector Current Continuous I 500 mAdc C Total Device Dissipation T = 25C P 1.0 Watt A D Derate above 25C 8.0 mW/C COLLECTOR 3 Total Device Dissipation T = 25C P 2.5 Watts C D Derate above 25C 20 mW/C BASE Operating and Storage Junction T , T 55 to +150 C J stg 2 Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit EMITTER 1 Thermal Resistance, Junction to Ambient R 125 C/W JA Thermal Resistance, Junction to Case R 50 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 30 Vdc (BR)CES (I = 100 Adc, V = 0) C BE Collector Cutoff Current I 100 nAdc CBO (V = 30 Vdc, I = 0) CB E Emitter Cutoff Current I 100 nAdc EBO (V = 10 Vdc, I = 0) EB C Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: March, 2006 Rev. 3 MPSW63/DMPSW63 MPSW64 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit (1) ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 5.0 Vdc) MPSW63 5,000 C CE MPSW64 10,000 (I = 100 mAdc, V = 5.0 Vdc) MPSW63 10,000 C CE MPSW64 20,000 CollectorEmitter Saturation Voltage V 1.5 Vdc CE(sat) (I = 100 mAdc, I = 0.1 mAdc) C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 100 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS (2) Current Gain Bandwidth Product f 125 MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test TYPICAL ELECTRICAL CHARACTERISTICS 200 T = 125C J 100 70 50 10 V 25C 30 V = 2.0 V CE 20 5.0 V 10 55C 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain 2.0 2.0 T = 25C T = 25C J J 1.8 1.6 V I /I = 100 BE(sat) C B 1.6 50 mA 100 mA 175 mA 300 mA 1.2 V V = 5.0 V BE(on) CE 1.4 V I /I = 1000 1.2 CE(sat) C B 0.8 I /I = 100 C B 1.0 0.4 0.8 I = 10 mA C 0 0.6 5.0 10 0.1 0.3 1.0 3.0 10 30 100 300 1 k 3 k 10 k 0.3 0.5 1.0 3.0 30 50 100 300 I , COLLECTOR CURRENT (mA) I , BASE CURRENT ( A) C B Figure 2. ON Voltage Figure 3. Collector Saturation Region