MPSW92RLRAG ON Semiconductor

MPSW92 One Watt High Voltage Transistor PNP Silicon MPSW92 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V 300 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 300 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 0.25 Adc CBO (V = 200 Vdc, I = 0) CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 3.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 25 C CE CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping MPSW92 TO92 5000 Units / Box MPSW92G TO92 5000 Units / Box (Pb Free) MPSW92RLREG TO92 2000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.