MPSW92
One Watt High Voltage
Transistor
PNP Silicon
MPSW92
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) V 300 Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C B
CollectorBase Breakdown Voltage V 300 Vdc
(BR)CBO
(I = 100 Adc, I = 0)
C E
EmitterBase Breakdown Voltage V 5.0 Vdc
(BR)EBO
(I = 100 Adc, I = 0)
E C
Collector Cutoff Current I 0.25 Adc
CBO
(V = 200 Vdc, I = 0)
CB E
Emitter Cutoff Current I 0.1 Adc
EBO
(V = 3.0 Vdc, I = 0)
EB C
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 1.0 mAdc, V = 10 Vdc) 25
C CE
(I = 10 mAdc, V = 10 Vdc) 40
C CE
(I = 30 mAdc, V = 10 Vdc) 25
C CE
CollectorEmitter Saturation Voltage V 0.5 Vdc
CE(sat)
(I = 20 mAdc, I = 2.0 mAdc)
C B
BaseEmitter Saturation Voltage V 0.9 Vdc
BE(sat)
(I = 20 mAdc, I = 2.0 mAdc)
C B
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product f 50 MHz
T
(I = 10 mAdc, V = 20 Vdc, f = 20 MHz)
C CE
CollectorBase Capacitance C 6.0 pF
cb
(V = 20 Vdc, I = 0, f = 1.0 MHz)
CB E
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
MPSW92 TO92 5000 Units / Box
MPSW92G TO92 5000 Units / Box
(Pb Free)
MPSW92RLREG TO92 2000 / Tape & Reel
(Pb Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.