Darlington Amplifier
Transistors
NPN Silicon
MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
www.onsemi.com
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
SOT23 (TO236)
CASE 318
STYLE 6
MAXIMUM RATINGS
COLLECTOR 3
Rating Symbol Value Unit
BASE
Collector Emitter Voltage V 30 Vdc
CES
1
Collector Base Voltage V 30 Vdc
CBO
Emitter Base Voltage V 10 Vdc
EBO
EMITTER 2
Collector Current Continuous I 300 mAdc
C
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board P
D
1x M
(Note 1) T = 25C 225 mW
A
Derate above 25C 1.8 mW/C
1
Thermal Resistance, JunctiontoAmbient R 556 C/W
JA
1x = Device Code
Total Device Dissipation Alumina P
D
x = M for MMBTA13LT1G,
Substrate, (Note 2) T = 25C 300 mW
A
SMMBTA13LT1G
Derate above 25C 2.4 mW/C
x = N for MMBTA14LT1G,
Thermal Resistance, JunctiontoAmbient 417 C/W
R
JA
SMMBTA14LT1G, T3G
M = Date Code*
Junction and Storage Temperature T , T 55 to +150 C
J stg
= PbFree Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
(Note: Microdot may be in either location)
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Date Code orientation and/or overbar may
1. FR5 = 1.0 0.75 0.062 in.
vary depending upon manufacturing location.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device Package Shipping
MMBTA13LT1G, SOT23 3,000 / Tape & Reel
(PbFree)
SMMBTA13LT1G
MMBTA14LT1G, SOT23 3,000 / Tape & Reel
(PbFree)
SMMBTA14LT1G
SMMBTA14LT3G SOT23 10,000 / Tape &
(PbFree)
Reel
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
For information on tape and reel specifications,
Reference Manual, SOLDERRM/D.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:
August, 2020 Rev. 7
MMBTA13LT1/DMMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V Vdc
(BR)CES
(I = 100 Adc, V = 0) 30
C BE
Collector Cutoff Current I nAdc
CBO
(V = 30 Vdc, I = 0) 100
CB E
Emitter Cutoff Current I nAdc
EBO
(V = 10 Vdc, I = 0) 100
EB C
ON CHARACTERISTICS (Note 3)
DC Current Gain h
FE
(I = 10 mAdc, V = 5.0 Vdc)
C CE
MMBTA13, SMMBTA13 5000
MMBTA14, SMMBTA14 10,000
(I = 100 mAdc, V = 5.0 Vdc)
C CE
MMBTA13, SMMBTA13 10,000
MMBTA14, SMMBTA14 20,000
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 100 mAdc, I = 0.1 mAdc) 1.5
C B
Base Emitter On Voltage V Vdc
BE
(I = 100 mAdc, V = 5.0 Vdc) 2.0
C CE
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 4) f MHz
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 125
C CE
3. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.
4. f = |h | f .
T fe test
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
www.onsemi.com
2