MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
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Features
S Prefix for Automotive and Other Applications Requiring Unique
COLLECTOR
Site and Control Change Requirements; AECQ101 Qualified and
3
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Characteristic Symbol Value Unit
3
Collector Emitter Voltage V Vdc
CEO
MMBTA42, SMMBTA42 300
1
MMBTA43 200
2
Collector Base Voltage V Vdc
CBO
MMBTA42, SMMBTA42 300
SOT23 (TO236)
MMBTA43 200
CASE 318
STYLE 6
Emitter Base Voltage V Vdc
EBO
MMBTA42, SMMBTA42 6.0
MMBTA43 6.0
MARKING DIAGRAMS
Collector Current Continuous I 500 mAdc
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
1D M M1E M
Total Device Dissipation FR5 Board P
D
(Note 1) T = 25C 225 mW
A 1 1
Derate above 25C 1.8 mW/C
Thermal Resistance, JunctiontoAmbient R 556 C/W
JA 1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
Total Device Dissipation Alumina P
D
M = Date Code*
Substrate (Note 2) T = 25C 300 mW
A
= PbFree Package
Derate above 25C 2.4 mW/C
(Note: Microdot may be in either location)
Thermal Resistance, JunctiontoAmbient R 417 C/W
JA
*Date Code orientation and/or overbar may
Junction and Storage Temperature T , T 55 to +150 C vary depending upon manufacturing location.
J stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. FR5 = 1.0 x 0.75 x 0.062 in.
See detailed ordering and shipping information in the package
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
dimensions section on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 1994
1 Publication Order Number:
October, 2016 Rev. 13 MMBTA42LT1/DMMBTA42L, SMMBTA42L, MMBTA43L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 3) V Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0) MMBTA42, SMMBTA42 300
C B
MMBTA43 200
Collector Base Breakdown Voltage V Vdc
(BR)CBO
(I = 100 Adc, I = 0) MMBTA42, SMMBTA42 300
C E
MMBTA43 200
Emitter Base Breakdown Voltage V 6.0 Vdc
(BR)EBO
(I = 100 Adc, I = 0)
E C
Collector Cutoff Current I
Adc
CBO
(V = 200 Vdc, I = 0) MMBTA42, SMMBTA42 0.1
CB E
(V = 160 Vdc, I = 0) MMBTA43 0.1
CB E
Emitter Cutoff Current I Adc
EBO
(V = 6.0 Vdc, I = 0) MMBTA42, SMMBTA42 0.1
EB C
(V = 4.0 Vdc, I = 0) MMBTA43 0.1
EB C
ON CHARACTERISTICS (Note 3)
DC Current Gain h
FE
(I = 1.0 mAdc, V = 10 Vdc) Both Types 25
C CE
(I = 10 mAdc, V = 10 Vdc) Both Types 40
C CE
(I = 30 mAdc, V = 10 Vdc) MMBTA42, SMMBTA42 40
C CE
MMBTA43 40
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 20 mAdc, I = 2.0 mAdc) MMBTA42, SMMBTA42 0.5
C B
MMBTA43 0.5
BaseEmitter Saturation Voltage V 0.9 Vdc
BE(sat)
(I = 20 mAdc, I = 2.0 mAdc)
C B
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product f 50 MHz
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C CE
CollectorBase Capacitance C pF
cb
(V = 20 Vdc, I = 0, f = 1.0 MHz) MMBTA42, SMMBTA42 3.0
CB E
MMBTA43 4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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