MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements AECQ101 Qualified and 3 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value Unit 3 Collector Emitter Voltage V Vdc CEO MMBTA42, SMMBTA42 300 1 MMBTA43 200 2 Collector Base Voltage V Vdc CBO MMBTA42, SMMBTA42 300 SOT23 (TO236) MMBTA43 200 CASE 318 STYLE 6 Emitter Base Voltage V Vdc EBO MMBTA42, SMMBTA42 6.0 MMBTA43 6.0 MARKING DIAGRAMS Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1D M M1E M Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A 1 1 Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA 1D = MMBTA42LT, SMMBTA42L M1E = MMBTA43LT Total Device Dissipation Alumina P D M = Date Code* Substrate (Note 2) T = 25C 300 mW A = PbFree Package Derate above 25C 2.4 mW/C (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 417 C/W JA *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C vary depending upon manufacturing location. J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. FR5 = 1.0 x 0.75 x 0.062 in. See detailed ordering and shipping information in the package 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 13 MMBTA42LT1/DMMBTA42L, SMMBTA42L, MMBTA43L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBTA42, SMMBTA42 300 C B MMBTA43 200 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MMBTA42, SMMBTA42 300 C E MMBTA43 200 Emitter Base Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) MMBTA42, SMMBTA42 0.1 CB E (V = 160 Vdc, I = 0) MMBTA43 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) MMBTA42, SMMBTA42 0.1 EB C (V = 4.0 Vdc, I = 0) MMBTA43 0.1 EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) Both Types 25 C CE (I = 10 mAdc, V = 10 Vdc) Both Types 40 C CE (I = 30 mAdc, V = 10 Vdc) MMBTA42, SMMBTA42 40 C CE MMBTA43 40 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) MMBTA42, SMMBTA42 0.5 C B MMBTA43 0.5 BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) MMBTA42, SMMBTA42 3.0 CB E MMBTA43 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2