LX5511LQ-TR Microchip

WWW.Microsemi .COM LX5511 LX5511 LX5511 TM InGaP HBT 2.3 2.5 GHz Power Amplifier PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION Advanced InGaP HBT The Microsemi LX5511 is a power For 20dBm OFDM output power 2.3-2.5GHz Operation amplifier that is optimized for WLAN (64QAM, 54Mbps), the PA provides a Single-Polarity 3.3V Supply applications in the 2.3GHz 2.5GHz low EVM (Error-Vector Magnitude) of Quiescent Current 90mA frequency range. The LX5511 Power less than 3.0%, and consumes 170mA Power Gain 26 dB Amplifier is implemented as a two- total DC current.. Total Current 150mA for stage monolithic microwave integrated The LX5511 is available in a 16-pin Pout=18 dBm OFDM circuit (MMIC) with active bias and 3mmx3mm micro-lead quad package EVM<3 %, 2.4% Typical output pre-matching. (MLPQ). The compact footprint, low 54Mbps/64QAM The device is manufactured with an profile, and thermal capability of the Small Footprint: 3x3mm2 Height 0.9mm InGaP/GaAs Heterojunction Bipolar MLPQ package makes the LX5511 an Transistor (HBT) IC process ideal solution for medium-gain power (MOCVD). With a single low voltage amplifier requirements for IEEE APPLICATIONS supply of 3.3V 26dB power gain 802.11b/g applications IEEE 802.11b/g between 2.3-2.5GHz, at a low quiescent current of 90mA. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM TM INFORMATION Thank you for your interest in Microsemi IPG products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link